Semiconductor device and method of manufacturing a semiconductor device

A semiconductor device having an active region and a voltage withstand region surrounding the active region, comprising:

• a first semiconductor layer of a first conductive type extending from the active region to the voltage withstand region;
• a second semiconductor region of a second conductive type, selectively disposed in the first semiconductor layer at a front side thereof;
• a plurality of first trench contact sections disposed at a peripheral section of the active region in the second semiconductor region, the plurality of first trench contact sections being apart from one another, and extending in a first direction;
• a second trench contact section disposed at the peripheral section of the active region in the second semiconductor region, the second trench contact section extending in the first direction, and being further from the voltage withstand region than the plurality of first trench contact sections in a second direction orthogonal to the first direction;
• an electric conductor layer that electrically connects together the plurality of first trench contact sections;
• and
• a first conductive connection region of the second conductive type, disposed in the second semiconductor region between the second trench contact section and the plurality of first trench contact sections, the first conductive connection region having a resistivity lower than a resistivity of the second semiconductor region, and electrically connecting the plurality of first trench contact sections to the second trench contact section.