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US 11,387,317 B2Granted
Field-effect transistor without punch-through stopper and fabrication method thereof
AssigneePostech Research and Business Development Foundation
InventorsRock Hyun Baek, Jun Sik Yoon, Jin Su Jeong, Seung Hwan Lee
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Abstract
Disclosed is a field effect transistor including an insulating film disposed between a source/drain region and a substrate. Since the insulating film prevents current leakage under a channel, it is not necessary to form a punch-through stopper. Further disclosed is a method of forming a field effect transistor.
Claims5
A fin field effect transistor (FinFET) comprising:
- a substrate;
- two first insulating films embedded in an upper portion of the substrate;
- an epitaxially grown source region and an epitaxially grown drain region disposed on the respective first insulating films;
- a semiconductor channel disposed between the source region and the drain region and formed to partially cover the first insulating films;
- a gate disposed on the semiconductor channel;
- and
- second insulating films in contact with respective side surfaces of the gate,
- wherein the substrate is composed of two first parts and one second part a thickness of the second part is thicker than the thickness of the two first parts, and the second part of the substrate is disposed between the two first parts,
- wherein the semiconductor channel is directly connected to the second part of the substrate, and the width of the semiconductor channel is greater than the width of the second part of the substrate,
- wherein each of the two first insulating films is disposed on each of the two first parts of the substrate, and a portion of the upper surface of each of the two first insulating films directly contacts a portion of the bottom of the semiconductor channel,
- wherein the fin field effect transistor comprises no punch-through stoppers.
8 more elements
Dependencies are inferred from the claim text.