Array substrate, display apparatus, and method of fabricating array substrate

A method of fabricating an array substrate having a plurality of first thin film transistors and a plurality of second thin film transistors, comprising:

• forming a first gate electrode layer on the base substrate and comprising a plurality of first gate electrodes respectively for the plurality of first thin film transistors;
• forming a first gate insulating layer on a side of the first gate electrode layer distal to the base substrate and on a side of the silicon layer proximal to the base substrate;
• forming a silicon layer comprising forming a plurality of silicon active layers respectively for the plurality of first thin film transistors on the first insulating layer;
• forming a metallic conductive layer on a side of the silicon layer away from the base substrate;
• and
• forming a metal oxide layer on a side of the metallic conductive layer away from the silicon layer;
• wherein the metallic conductive layer comprises gate electrodes of the plurality of second thin film transistors, source electrodes and drain electrodes of the plurality of first thin film transistors;
• the plurality of silicon active layers are in direct contact with the first gate insulating layer;
• the gate electrodes of the plurality of second thin film transistors and the source electrodes and drain electrodes of the plurality of first thin film transistors are spaced apart from the first gate insulating layer;
• forming the metal oxide layer comprises forming a plurality of first metal oxide blocks that are floating and a plurality of second metal oxide blocks;
• the plurality of second metal oxide blocks are a plurality of metal oxide active layers respectively for the plurality of second thin film transistors;
• the plurality of first metal oxide blocks and the plurality of second metal oxide blocks are in a same layer;
• an orthographic projection of a respective one of the plurality of first metal oxide blocks on the base substrate at least partially overlaps with an orthographic projection of a respective one of the plurality of silicon active layers on the base substrate;
• and
• an orthographic projection of a respective one of the plurality of second metal oxide blocks on the base substrate at least partially overlaps with an orthographic projection of a respective one of the gate electrodes of the plurality of second thin film transistors on the base substrate.