Back to results
US 11,387,304 B2Granted
Light emitting element display device
AssigneeJapan Display Inc.
InventorToshihiro Sato
Life of this patent
Estimating the term…
Abstract
A display device includes two or more transistors in one pixel, and the two or more transistors include a first transistor of which a channel semiconductor layer is polycrystalline silicon, and a second transistor of which a channel semiconductor layer is an oxide semiconductor.
Claims17
A display device comprising:
- a substrate;
- a plurality of pixels;
- each of the pixels including a first polycrystalline silicon layer, a second polycrystalline silicon layer, an oxide semiconductor layer, a first electrode, a second electrode, and an emitting element, and
- a first insulation layer, a second insulation layer, and a third insulation layer which cover the pixels,
- wherein, the first polycrystalline silicon layer is on the substrate,
- the second polycrystalline silicon layer is on the substrate,
- the first insulation layer is on the first polycrystalline silicon layer and the second polycrystalline silicon layer,
- the oxide semiconductor layer is on the first insulation layer,
- the second insulation layer is on the oxide semiconductor layer,
- the first electrode is on the second insulation layer,
- the second electrode is on the second insulation layer,
- the third insulation layer is on the first electrode and the second electrode,
- the emitting element is on the third insulation layer,
- each of the pixels includes:
- a first transistor;
- a second transistor connected to the first transistor and the emitting element;
- and
- a capacitor connected to the second transistor,
- the oxide semiconductor layer of each of the pixels has a first plane region, a second plane region, and a third plane region,
- the first plane region of the oxide semiconductor layer is a first channel region of the first transistor,
- the second plane region of the oxide semiconductor layer is a second gate electrode of the second transistor,
- the third plane region of the oxide semiconductor layer is a first capacitor electrode of the capacitor,
- a first gate insulation film of the first transistor is made of the second insulation layer and overlaps the first plane region of the oxide semiconductor layer,
- a second gate insulation film of the second transistor is made of the first insulation layer and overlaps the second plane region of the oxide semiconductor layer,
- a first capacitor insulation film of the capacitor is made of the first insulation layer and overlaps the third plane region of the oxide semiconductor layer,
- a first gate electrode of the first transistor is made of the first electrode and overlaps the first plane region of the oxide semiconductor layer,
- a second channel region of the second transistor is made of the first polycrystalline silicon layer and overlaps the second plane region of the oxide semiconductor layer,
- a second capacitor electrode of the capacitor is made of the second polycrystalline silicon layer and overlaps the third plane region of the oxide semiconductor layer,
- a second capacitor insulation film of the capacitor is made of the second insulation layer and overlaps the third plane region of the oxide semiconductor layer,
- a third capacitor electrode of the capacitor is made of the second electrode, is connected to the second capacitor electrode, and overlaps the third plane region of the oxide semiconductor layer, and
- the emitting element overlaps the second plane region and the third plane region of the oxide semiconductor layer.
28 more elements
A display device comprising:
- a substrate;
- a plurality of pixels;
- each of the pixels including a first poly crystalline silicon layer, a second poly crystalline silicon layer, a first oxide semiconductor layer, a second oxide semiconductor layer, a first metal electrode, a second metal electrode, a third metal electrode, and an emitting element, and
- a first insulation layer, a second insulation layer, and a third insulation layer which cover the pixels,
- wherein, the first poly crystalline silicon layer is on the substrate,
- the second poly crystalline silicon layer is on the substrate,
- the first insulation layer is on the first poly crystalline silicon layer and the second poly crystalline silicon layer,
- the first and second metal electrodes and the second oxide semiconductor layer are on the first insulation layer,
- the second insulation layer is on the first and second metal electrodes,
- the first oxide semiconductor layer is on the second insulation layer,
- the third insulation layer is on the first oxide semiconductor layer and the second oxide semiconductor layer,
- the third metal electrode is on the third insulation layer,
- the emitting element is on the third metal electrode,
- each of the pixels includes:
- a first transistor;
- a second transistor;
- and
- a capacitor,
- each of the pixels has a first plane region, a second plane region, and the third plane region,
- the first oxide semiconductor layer includes a portion overlapping the first plane region and being a first channel region of the first transistor,
- the second insulation layer includes a portion overlapping the first plane region and being a first gate insulation film of the first transistor,
- the first metal electrode overlapping the first plane region is a first gate electrode of the first transistor,
- the second oxide semiconductor layer includes a portion overlapping the second plane region and being a second gate electrode of the second transistor,
- the first insulation layer includes a portion overlapping the second plane region and being a second gate insulation film of the second transistor,
- the first poly crystalline silicon layer includes a portion overlapping the second plane region and being a second channel region of the second transistor,
- the second metal electrode includes a portion overlapping the third plane region and being a first capacitor electrode of the capacitor,
- the first insulation layer includes a portion overlapping the third plane region and being a first capacitor insulation film of the capacitor,
- the second poly crystalline silicon layer includes a portion overlapping the third plane region and being a second capacitor electrode of the capacitor,
- a first thickness of the third metal electrode is thicker than a second thickness of the first poly crystalline silicon layer, than a third thickness of the second poly crystalline silicon layer, than a fourth thickness of the first oxide semiconductor layer, than a fifth thickness of the second oxide semiconductor layer, than a sixth thickness of the first metal electrode, and than a seventh thickness of the second metal electrode, and
- the third metal electrode overlaps the first channel region of the first transistor.
27 more elements
A display device comprising:
- a substrate;
- a plurality of pixels;
- and
- a first insulation layer, a second insulation layer, and a third insulation layer which cover the pixels,
- wherein each of the pixels including:
- an emitting element;
- a first poly crystalline silicon layer with a first channel portion;
- a second poly crystalline silicon layer;
- an oxide semiconductor layer with a second channel portion;
- a first transistor with the first channel portion and a first gate electrode portion;
- a second transistor with the second channel portion and a second gate electrode portion;
- a first metal electrode including the second gate electrode portion;
- a second metal electrode;
- and a pixel electrode,
- the first poly crystalline silicon layer is on the substrate,
- the second poly crystalline silicon layer is on the substrate,
- the first and second poly crystalline silicon layers are located at a same layer,
- the first insulation layer is on the first poly crystalline silicon layer and the second poly crystalline silicon layer,
- the first gate electrode portion and the second channel portion are on the first insulation layer,
- the second insulation layer is on the first gate electrode portion and the second channel portion,
- the first metal electrode is on the second insulation layer,
- the third insulation layer is on the first metal electrode,
- the second metal electrode is on the third insulation layer,
- the pixel electrode is above the second metal electrode, and
- the second metal electrode overlaps the first poly crystalline silicon layer and the second channel portion.
22 more elements
Dependencies are inferred from the claim text.