Electronic devices and methods of manufacturing the same

A method of manufacturing an electronic device, the method comprising:

• forming a pixel electrode;
• forming an active layer on the pixel electrode;
• forming a conductive layer associated with an opposed electrode on the active layer;
• forming a thin film associated with a first encapsulation film on the conductive layer associated with the opposed electrode;
• and
• simultaneously or sequentially etching the thin film associated with the first encapsulation film and the conductive layer associated with the opposed electrode to form the first encapsulation film and the opposed electrode, such that
• the first encapsulation film and the opposed electrode have a common planar shape,
• the first encapsulation film covers an upper surface of the opposed electrode and exposes an outer sidewall of the opposed electrode, such that the outer sidewall of the first encapsulation film and the outer sidewall of the opposed electrode are substantially coplanar,
• a second encapsulation film covers an upper surface of the first encapsulation film, covers entire side surfaces of the opposed electrode and the first encapsulation film, and covers the exposed and substantially coplanar outer sidewalls of the first encapsulation film and the opposed electrode, and
• wherein the active layer has a shape that is different from the common planar shape of the opposed electrode and the first encapsulation film, and the opposed electrode on the active layer covers an entirety of an upper surface of the active layer and an entirety of outer sidewalls of the active layer.

An electronic device, comprising:

• a semiconductor substrate;
• a plurality of photo-sensing devices integrated into the semiconductor substrate;
• a photoelectric device on the semiconductor substrate, the photoelectric device including
• a plurality of pixel electrodes on the semiconductor substrate, each pixel electrode vertically overlapping a separate set of one or more photo-sensing devices of the plurality of photo-sensing devices,
• an active layer on the plurality of pixel electrodes, and
• an opposed electrode on the active layer;
• and
• a first encapsulation film on the opposed electrode,
• wherein
• the opposed electrode and the first encapsulation film have a common planar shape,
• the first encapsulation film covers an upper surface of the opposed electrode and exposes an outer sidewall of the opposed electrode, such that the outer sidewall of the first encapsulation film and the outer sidewall of the opposed electrode are substantially coplanar,
• a second encapsulation film covers an upper surface of the first encapsulation film, covers entire side surfaces of the opposed electrode and the first encapsulation film, and covers the exposed and substantially coplanar outer sidewalls of the first encapsulation film and the opposed electrode, and
• the active layer has a shape that is different from the common planar shape of the opposed electrode and the first encapsulation film, and the opposed electrode on the active layer covers an entirety of an upper surface of the active layer and an entirety of outer sidewalls of the active laver.