Nonvolatile semiconductor storage device and method of manufacturing the same

A nonvolatile semiconductor storage device comprising:

• a plurality of first wiring layers extending in a first direction;
• a plurality of second wiring layers, extending in a second direction intersecting the first direction, provided above the plurality of first wiring layers along a third direction intersecting the first direction and the second direction;
• a plurality of third wiring layers, extending in the second direction, provided above the plurality of second wiring layers along the third direction;
• a first memory cell, arranged between the second wiring layer and the first wiring layer at each cross point of one of the plurality of second wiring layers and one of the plurality of first wiring layers, the first memory cell having a first resistance change film;
• a plurality of fourth wiring layers extending in the first direction and provided above the plurality of third wiring layers along the third direction;
• and
• a second memory cell, arranged between the fourth wiring layer and the third wiring layer at each cross point of one of the plurality of fourth wiring layers and one of the plurality of third wiring layers, the second memory cell having a second resistance change film,
• wherein the second wiring layer has a first surface that is in contact with the third wiring layer and a second surface that has a portion extending in the first direction, the extended portion of the second surface being longer than the first surface in the first direction, the second surface being spaced from the first surface in the third direction, and
• wherein the third wiring layer has a third surface that is in contact with the first surface of the second wiring layer, the third surface being longer than the first surface in the first direction.