Monolithic multi-chip-collective light-emitting diode

A monolithic multi-chip-collective light emitting diode comprising:

• an n-type structure, a p-type structure, and an active-region sandwiched between the n-type structure and the p-type structure;
• a plurality of monolithically integrated mini chips, wherein each of the mini chips comprises a mini n-contact formed on the n-type structure which is exposed by an opening in the p-type structure and the active-region, a mini p-ohmic contact formed on the p-type structure, and a mini light emitting area defined by the mini p-ohmic contact;
• an n-bridge metal electrically connecting the mini n-contact of each of the mini chips to an n-bonding pad, wherein the n-bridge metal is formed on the p-type structure and on sidewall of the opening in the p-type structure and the active-region;
• wherein the n-bridge metal comprises a light reflective layer facing the p-type structure, a diffusion blockage layer formed on the light reflective layer, a current conduction layer formed on the diffusion blockage layer, and an outer layer formed on the current conduction layer for adhesion to a dielectric layer.

A monolithic multi-chip-collective light emitting diode comprising:

• an n-type structure, a p-type structure, and an active-region sandwiched between the n-type structure and the p-type structure;
• a plurality of monolithically integrated mini chips, wherein each of the mini chips comprises a mini n-contact formed on the n-type structure which is exposed by an opening in the p-type structure and the active-region, a mini p-ohmic contact formed on the p-type structure, and a mini light emitting area defined by the mini p-ohmic contact;
• an n-bridge metal electrically connecting the mini n-contact of each of the mini chips to an n-bonding pad, wherein the n-bridge metal is formed on the p-type structure and on sidewall of the opening in the p-type structure and the active-region;
• wherein the n-bridge metal forms an omnidirectional reflector (ODR).

A monolithic multi-chip-collective light emitting diode comprising:

• an n-type structure, a p-type structure, and an active-region sandwiched between the n-type structure and the p-type structure;
• a plurality of monolithically integrated mini chips, wherein each of the mini chips comprises a mini n-contact formed on the n-type structure which is exposed by an opening in the p-type structure and the active-region, a mini p-ohmic contact formed on the p-type structure, and a mini light emitting area defined by the mini p-ohmic contact;
• an n-bridge metal electrically connecting the mini n-contact of each of the mini chips to an n-bonding pad, wherein the n-bridge metal is formed on the p-type structure and on sidewall of the opening in the p-type structure and the active-region;
• wherein the mini chips have the same size with a square or rectangular shape when viewed from top, the mini n-contact is formed at a corner of each of the mini chips, respectively, and corners of neighboring mini chips occupied by the mini n-contact are not adjacent to each other.

A monolithic multi-chip-collective light emitting diode comprising:

• an n-type structure, a p-type structure, and an active-region sandwiched between the n-type structure and the p-type structure;
• a plurality of monolithically integrated mini chips, wherein each of the mini chips comprises a mini n-contact formed on the n-type structure which is exposed by an opening in the p-type structure and the active-region, a mini p-ohmic contact formed on the p-type structure, and a mini light emitting area defined by the mini p-ohmic contact;
• an n-bridge metal electrically connecting the mini n-contact of each of the mini chips to an n-bonding pad, wherein the n-bridge metal is formed on the p-type structure and on sidewall of the opening in the p-type structure and the active-region;
• wherein the mini chips have the same size with a square or rectangular shape when viewed from top, every four neighboring mini chips have their respective mini n-contacts clustered and merged into a single mini n-contact at adjacent corners thereof.

A monolithic multi-chip-collective light emitting diode comprising:

• an n-type structure, a p-type structure, and an active-region sandwiched between the n-type structure and the p-type structure;
• a plurality of monolithically integrated mini chips, wherein each of the mini chips comprises a mini n-contact formed on the n-type structure which is exposed by an opening in the p-type structure and the active-region, a mini p-ohmic contact formed on the p-type structure, and a mini light emitting area defined by the mini p-ohmic contact;
• an n-bridge metal electrically connecting the mini n-contact of each of the mini chips to an n-bonding pad, wherein the n-bridge metal is formed on the p-type structure and on sidewall of the opening in the p-type structure and the active-region;
• and
• a first dielectric layer formed on the p-type structure and on sidewall of the opening in the p-type structure and the active-region, and the n-bridge metal is formed on the first dielectric layer, wherein the first dielectric layer is UV reflective.

A monolithic multi-chip-collective light emitting diode comprising:

• an n-type structure, a p-type structure, and an active-region sandwiched between the n-type structure and the p-type structure;
• a plurality of monolithically integrated mini chips, wherein each of the mini chips comprises a mini n-contact formed on the n-type structure which is exposed by an opening in the p-type structure and the active-region, a mini p-ohmic contact formed on the p-type structure, and a mini light emitting area defined by the mini p-ohmic contact;
• an n-bridge metal electrically connecting the mini n-contact of each of the mini chips to an n-bonding pad, wherein the n-bridge metal is formed on the p-type structure and on sidewall of the opening in the p-type structure and the active-region;
• a first dielectric layer formed on the p-type structure and on sidewall of the opening in the p-type structure and the active-region, and the n-bridge metal is formed on the first dielectric layer;
• and
• a second dielectric layer and mini p-bonding pads of the mini chips, wherein the second dielectric layer is formed on the n-bridge metal, the mini p-ohmic contacts and the first dielectric layer, and the mini p-bonding pads contact the mini p-ohmic contacts through openings in the second dielectric layer, respectively.