Method of forming semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChi-Ming Lu, Chih-Hui Huang, Sheng-Chan Li, Jung-Chih Tsao, Yao-Hsiang Liang
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Abstract
A method of fabricating a semiconductor device includes forming a first film having a first film stress type and a first film stress intensity over a substrate and forming a second film having a second film stress type and a second film stress intensity over the first film. The second film stress type is different than the first film stress type. The second film stress intensity is about same as the first film stress intensity. The second film compensates stress induced effect of non-flatness of the substrate by the first film.
Claims20
A device comprising:
- an image sensor element disposed in a substrate;
- a metal layer stack disposed over the substrate, wherein the metal layer stack includes:
- a first metal pillar and a second metal pillar having a gap therebetween that is aligned with the image sensor element, and
- wherein the first metal pillar and the second metal pillar each include a first metal layer disposed over a second metal layer, the first metal layer physically contacts a top surface of the second metal layer, the first metal layer includes a first metal, and the second metal layer includes a second metal and fluorine;
- and
- a dielectric layer disposed over the substrate, wherein the dielectric layer physically contacts first sidewalls of the first metal pillar and second sidewalls of the second metal pillar, the first sidewalls of the first metal pillar are formed by the first metal layer and the second metal layer, and the second sidewalls of the second metal pillar are formed by the first metal layer and the second metal layer.
A device comprising:
- an image sensor device;
- and
- a metal grid disposed over the image sensor device, wherein the metal grid includes:
- a first metal film consisting of a first metal having a first stress type,
- a second metal film consisting of a second metal having a second stress type, wherein the first stress type is opposite the second stress type, and
- an opening aligned with a light sensing region of the image sensor device, wherein the opening extends through the first metal film and the second metal film.
A device comprising:
- a substrate;
- and
- a multi-layer grid disposed over the substrate, wherein the multi-layer grid has a first material stack and a second material stack that form an opening aligned with a light sensing region, wherein the first material stack and the second material stack of the multi-layer grid each include:
- a dielectric layer,
- a first metal layer disposed over the dielectric layer,
- a second metal layer disposed over the first metal layer, and
- a third metal layer disposed over the second metal layer, wherein the first metal layer includes a first metal, the second metal layer includes a second metal, and the third metal layer includes a third metal and fluorine, and further wherein the dielectric layer, the first metal layer, the second metal layer, and the third metal layer have the same width.
Dependencies are inferred from the claim text.