Back to results
US 11,387,268 B2Granted
Image sensor including dummy patterns positioned between adjacent transfer gates
AssigneeSK hynix Inc.
InventorsSung-Kun Park, Hye-Won Mun
Life of this patent
Estimating the term…
Abstract
An image sensor includes a first transfer gate formed over a substrate, and including a first projection; a second transfer gate formed over the substrate, neighboring the first transfer gate, and including a second projection; and a floating diffusion formed in the substrate, and partially overlapping with the first transfer gate and the second transfer gate, wherein the first projection and the second projection face each other.
Claims20
An image sensor comprising:
- a floating diffusion formed in a substrate;
- first to fourth transfer gates formed over the substrate to partially overlap with the floating diffusion;
- and
- dummy patterns formed over the substrate,
- wherein the dummy patterns are positioned between the first and second transfer gates, between the second and third transfer gates, between the third and fourth transfer gates, and between the first and fourth transfer gates, respectively.
2 more elements
An image sensor comprising:
- a floating diffusion formed in a substrate;
- a first transfer gate and a second transfer gate formed over the substrate to partially overlap with the floating diffusion, wherein each of the first and second transfer gates has a first sidewall and a second sidewall, the first sidewall of the first transfer gate being arranged to face in parallel with the second sidewall of the second transfer gate;
- and
- a first dummy pattern formed over the substrate between the first sidewall of the first transfer gate and the second sidewall of the second transfer gate.
1 more element
An image sensor comprising:
- a floating diffusion formed in a substrate;
- a first to fourth transfer gates formed over the substrate to partially overlap with the floating diffusion, wherein the first to fourth transfer gates surround the floating diffusion in a clockwise direction, wherein the first transfer gate has a first sidewall and the second transfer gate has a second sidewall;
- a dummy pattern formed over the substrate between the first sidewall of the first transfer gate and the second sidewall of the second transfer gate;
- and
- a spacer filling a space between the first sidewall of the first transfer gate and the dummy pattern.
2 more elements
Dependencies are inferred from the claim text.