Solid-state imaging device and manufacturing method
AssigneeSony Semiconductor Solutions Corporation
InventorKoichi Takeuchi
Life of this patent
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Abstract
A substrate includes a photoelectric converting unit in a pixel unit and a reflection ratio adjusting layer provided on the substrate in an incident direction of incident light with respect to the substrate for adjusting reflection of the incident light on the substrate. The reflection ratio adjusting layer includes a first layer formed on the substrate and a second layer formed on the first layer, the first layer has an uneven structure provided on the substrate, and a recess portion on the uneven structure is filled with a material having a lower refractive index than that of the substrate forming the second layer, and a thickness of the first layer is optimized for a wavelength of light to be received. The present technology may be applied to an imaging device.
Claims20
A solid-state imaging device, comprising:
- a substrate including a photoelectric converting unit in a pixel unit;
- and
- a reflection ratio adjusting layer provided on the substrate in an incident direction of incident light with respect to the substrate for adjusting reflection of the incident light on the substrate,
- wherein the reflection ratio adjusting layer includes:
- a first layer formed on the substrate and a second layer formed on the first layer,
- the first layer has an uneven structure including projected portions and recess portions provided on the substrate, and the recess portions of the uneven structure are filled with a material having a lower refractive index than a refractive index of the second layer, and
- a thickness of the first layer is made to a thickness optimized for a wavelength of light to be received,
- wherein the projected portions and the substrate including the photoelectric converting unit are made of a same material,
- wherein the recess portions and the projected portions have a rectangular shape, and
- wherein a width of the rectangular shaped recess portions is greater than a width of the rectangular shaped projected portions in a cross-sectional view.
A manufacturing method of manufacturing a solid-state imaging device provided with
- a substrate including a photoelectric converting unit in a pixel unit, and
- a reflection ratio adjusting layer provided on the substrate in an incident direction of incident light with respect to the substrate for adjusting reflection of the incident light on the substrate, the method comprising:
- forming the reflection ratio adjusting layer including
- a first layer having an uneven structure including projected portions and recess portions formed on the substrate and a second layer formed on the first layer;
- filling the recess portions on the uneven structure provided on the substrate included in the first layer with a material having a lower refractive index than a refractive index of the second layer;
- and
- making a thickness of the first layer to a thickness optimized for a wavelength of light to be received
- wherein the projected portions and the substrate including the photoelectric converting unit are made of a same material,
- wherein the recess portions and the projected portions have a rectangular shape, and
- wherein a width of the rectangular shaped recess portions is greater than a width of the rectangular shaped projected portions in a cross-sectional view.
Dependencies are inferred from the claim text.