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US 11,387,258 B2Granted
Substrate for electro-optical device, electro-optical device, and electronic apparatus
AssigneeSeiko Epson Corporation
InventorSatoshi Ito
Life of this patent
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Abstract
An element substrate serving as a substrate for an electro-optical device includes a base material, a TFT disposed on the base material, the TFT including a semiconductor layer, and a first insulating film including a silicon oxide film disposed between the base material and the semiconductor layer, wherein a content of hydrogen in the silicon oxide film is 1.0×1019 atoms/cm3 or more but less than 1.0×1020 atoms/cm3.
Claims5
A substrate for an electro-optical device, the substrate comprising:
- a base material comprising a transparent quartz substrate or a glass substrate;
- a transistor including a semiconductor layer, and the semiconductor layer including a polysilicon film;
- a first insulating film comprising a first silicon oxide film, wherein
- the first silicon oxide film comprises fluorine and hydrogen,
- a content of the fluorine in the first silicon oxide film is less than 1.0×1019 atoms/cm3, and
- a content of the hydrogen in the first silicon oxide film is 1.0×1019 atoms/cm3 or more but less than 1.0×1020 atoms/cm3;
- a second insulating film comprising a second silicon oxide film or a silicon nitride film;
- and
- a light-shielding film disposed between the first insulating film and the second insulating film, the first insulating film, the light-shielding film and the second insulating film being disposed between the base material and the semiconductor layer, and the transistor being disposed on the second insulating film.
6 more elements
Dependencies are inferred from the claim text.