Three-dimensional memory device containing metal-organic framework inter-word line insulating layers

Abstract

A three-dimensional memory device includes a vertically alternating stack of insulating layers and electrically conductive layers located over a top surface of a substrate and memory stack structures extending through the alternating stack. Each of the memory stack structures contains a respective memory film and a respective vertical semiconductor channel, and each of the insulating layers contains a metal-organic framework (MOF) material portion. The MOF material portion has a low dielectric constant, and reduces RC coupling between the electrically conductive layers. An optional airgap may be located within the MOF material portion to further reduce the effective dielectric constant. Optionally, discrete charge storage regions or floating gates may be formed only at the levels of the electrically conductive layers to reduce program disturb and noise in the device.

Dependencies are inferred from the claim text.