Nonvolatile memory device and method for fabricating the same

A nonvolatile memory device comprising:

• a substrate including a first region and a second region;
• an electrode structure including a plurality of electrodes vertically stacked on the substrate, the electrode structure having a stair step structure on the second region,
• a plurality of first vertical layers penetrating the electrode structure on the first region;
• a plurality of contact plugs on the stair step structure and connected to respective ones of the plurality of electrodes;
• at least one second vertical layer penetrating the electrode structure between the first region and the second region;
• a plurality of bit lines crossing the electrode structure in the first region and connected to the plurality of first vertical layers;
• and
• a plurality of conductive lines connected to the plurality of contact plugs,
• wherein the at least one second vertical layer is free of connection with any bit line, and
• wherein the at least one second vertical layer is spaced apart from the stair step structure.

A nonvolatile memory device comprising:

• a substrate including a first region and a second region;
• an electrode structure including a plurality of electrodes vertically stacked on the substrate, the electrode structure having a stair step structure on the second region,
• a plurality of first vertical layers penetrating the electrode structure on the first region;
• at least one second vertical layer penetrating and supporting the electrode structure on the second region;
• and
• a plurality of bit lines crossing the electrode structure in the first region and connected to the plurality of first vertical layers,
• wherein the at least one second vertical layer comprises a dielectric supporter and is free of connection with any bit line.