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US 11,387,237 B2Granted
Semiconductor component having a fin and an epitaxial contact structure over an epitaxial layer thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKuo-Cheng Ching, Ching-Wei Tsai, Kuan-Lun Cheng, Chih-Hao Wang
Life of this patent
Estimating the term…
Abstract
A FinFET device includes a fin, an epitaxial layer disposed at a side surface of the fin, a contact disposed on the epitaxial layer and on the fin. The contact includes an epitaxial contact portion and a metal contact portion disposed on the epitaxial contact portion. The doping concentration of the epitaxial contact portion is higher than a doping concentration of the epitaxial layer.
Claims20
A semiconductor component comprising:
- an n-type device comprising:
- a first fin disposed on a substrate;
- a first epitaxial layer disposed on a sidewall of the first fin;
- and
- a first contact disposed over the first fin and the first epitaxial layer, the first contact comprising an epitaxial contact portion and a metal contact portion disposed on the epitaxial contact portion, wherein the first epitaxial layer and the epitaxial contact portion have an interface there-between;
- and
- a p-type device comprising:
- a second fin disposed on the substrate;
- a second epitaxial layer disposed on a sidewall of the second fin;
- and
- a second contact disposed on the second epitaxial layer, wherein a top surface of the epitaxial contact portion is higher than a top surface of the second epitaxial layer.
8 more elements
A FinFET device comprising:
- a fin;
- an epitaxial layer disposed on a sidewall of the fin;
- and
- a contact disposed on the epitaxial layer and on the fin, the contact comprising an epitaxial contact portion and a metal contact portion disposed on the epitaxial contact portion, wherein a doping concentration of the epitaxial contact portion is higher than a doping concentration of the epitaxial layer, and wherein the epitaxial layer comprises a first portion and a second portion at opposite sides of the fin, and the first portion is separated from the second portion by the contact.
1 more element
A semiconductor device comprising:
- a semiconductor fin extending from a substrate;
- a source/drain epitaxial layer having a first portion extending on a first side of the semiconductor fin and a second portion extending on a second side of the semiconductor fin, the first portion of the source/drain epitaxial layer having a greater height than the second portion of the source/drain epitaxial layer;
- and
- an epitaxial contact structure extending along a notched corner formed from a sidewall of the first portion of the source/drain epitaxial layer, a top surface of the semiconductor fin and a top surface of the second portion of the source/drain epitaxial layer.
1 more element
Dependencies are inferred from the claim text.