US 11,387,218 B2Granted

Pad-out structure for semiconductor device and method of forming the same

AssigneeYangtze Memory Technologies Co., Ltd.

InventorsLiang Xiao, Shu Wu

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Abstract

The present disclosure provides a method of fabricating a semiconductor device. The method can include bonding a first die and a second die face to face, the first die including a substrate, transistors formed on a face side of the first die over a semiconductor layer with an insulating layer between the substrate and the semiconductor layer, and a first contact structure on the face side of the first die extending through the insulating layer. The method can also include exposing the first contact structure from the back side of the first die, forming, from the back side of the first die, a contact hole in the insulating layer to expose the semiconductor layer, and forming, on the back side of the first die, a first pad-out structure connected with the first contact structure and a second pad-out structure, on the contact hole, conductively connected with the semiconductor layer.

Claims20

Dependent claims

A method for fabricating a semiconductor device, comprising:

bonding a first die and a second die face to face, the first die including a first substrate, an insulating layer on a face side of the first substrate, a first contact structure on the face side of the first die extending through a first portion of the insulating layer, and a semiconductor layer on a face side of a second portion of the insulating layer, a portion of the insulating layer being disposed between the first contact structure and the semiconductor layer, and the portion of the insulating layer being in direct contact with the first contact structure and a side surface of the semiconductor layer that faces the first contact structure;
exposing the first contact structure from a back side of the first die by removing the first substrate from the back side of the first die;
forming, from the back side of the first die, a contact hole in the second portion of the insulating layer, the contact hole exposing the semiconductor layer;
and
forming, on the back side of the first die, a first pad-out structure conductively connected with the first contact structure and a second pad-out structure on the contact hole that is conductively connected with the semiconductor layer.

2 more elements

A semiconductor device, comprising:

a first die and a second die bonded face to face, the first die including an insulating layer on a back side of the first die, a first contact structure extending from a face side of the first die through a first portion of the insulating layer, a semiconductor layer on a face side of a second portion of the insulating layer, and first transistors formed on a face side of the semiconductor layer, a portion of the insulating layer being disposed between the first contact structure and the semiconductor layer, and the portion of the insulating layer being in direct contact with the first contact structure and a side surface of the semiconductor layer that faces the first contact structure;
a first pad-out structure disposed on the back side of the first die, the first pad-out structure being electrically coupled with the first contact structure;
and
a second pad-out structure disposed on the back side of the first die, the second pad-out structure being electrically coupled with the semiconductor layer.

1 more element

Dependencies are inferred from the claim text.

Facts

Application: 17/127,083Filed 18 Dec 2020 · continuation
Priority: 2 Sep 2020
Published: US 2022/0068883 A13 Mar 2022
Granted: 12 Jul 2022
Term ends: Not estimatedThe source records don’t support an estimate.

Classification29 codes

H10B 41/27
With source and drain on different levels, e.g. with sloping channels: the channels comprising vertical portions, e.g. U-shaped channels
H10W 90/00
Package configurations
H10B 41/50
Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates: characterised by the boundary region between the core…
H10B 43/27
With source and drain on different levels, e.g. with sloping channels: the channels comprising vertical portions, e.g. U-shaped channels