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US 11,387,204 B2Granted
Semiconductor structure and method of fabricating the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJie Chen, Hsien-Wei Chen
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Abstract
A semiconductor structure including a semiconductor substrate, an interconnect structure disposed over the semiconductor substrate, and a bonding structure disposed over the interconnect structure is provided. The bonding structure includes a dielectric layer covering the interconnect structure, signal transmission features penetrating through the dielectric layer, and a thermal conductive feature penetrating through the dielectric layer. The thermal conductive feature includes a thermal routing and thermal pads, and the thermal pads are disposed on and share the thermal routing.
Claims20
A semiconductor structure, comprising:
- a semiconductor substrate;
- an interconnect structure disposed over the semiconductor substrate;
- and
- a bonding structure disposed over the interconnect structure, the bonding structure comprising a dielectric layer covering the interconnect structure, signal transmission features penetrating through the dielectric layer, and a thermal conductive feature penetrating through the dielectric layer, wherein the thermal conductive feature comprises a thermal routing and thermal pads, the thermal pads are disposed on and share the thermal routing, and the thermal routing laterally extends between at least two neighboring signal transmission features among the signal transmission features,
- wherein the interconnect structure comprises interconnect wirings, a passivation layer covering the interconnect wirings and a first thermal conductor partially covered by the passivation layer, and a first portion of the thermal routing is landed on the first thermal conductor.
2 more elements
A semiconductor structure, comprising:
- a first semiconductor die comprising an interconnect structure and a first bonding structure, the interconnect structure comprising interconnect wirings, a passivation layer covering the interconnect wirings and a thermal conductor partially covered by the passivation layer, and the thermal routing being landed on the thermal conductor, the first bonding structure comprising a first dielectric layer, first signal transmission features penetrating through the first dielectric layer, and a first thermal conductive feature penetrating through the first dielectric layer, wherein the first thermal conductive feature comprises a first thermal routing and first thermal pads, the first thermal pads are disposed on and share the first thermal routing, and the first thermal routing laterally extends between at least two neighboring first signal transmission features among the first signal transmission features;
- and
- a second semiconductor die comprising a second bonding structure, the second bonding structure comprising a second dielectric layer, second signal transmission features penetrating through the second dielectric layer, and a second thermal conductive feature penetrating through the second dielectric layer, wherein the second thermal conductive feature comprises a second thermal routing and second thermal pads, and the second thermal pads are disposed on and share the second thermal routing;
- and
- an insulating encapsulant disposed on the second semiconductor die and encapsulating the first semiconductor die,
- wherein the first dielectric layer is bonded to the second dielectric layer, the first signal transmission features are bonded and electrically connected to the second signal transmission features, and the first thermal pads are bonded and thermally coupled to the second thermal pads.
3 more elements
A method, comprising:
- providing a semiconductor substrate having an interconnect structure disposed thereon, wherein the interconnect structure comprises interconnect wirings, a passivation layer covering the interconnect wirings and a thermal conductor partially covered by the passivation layer, and the thermal routing is landed on the thermal conductor;
- and
- forming an inter-dielectric layer over the interconnect structure;
- forming vias and a thermal routing in the inter-dielectric layer;
- forming a bonding dielectric layer over the inter-dielectric layer;
- and
- forming bonding pads and thermal pads in the bonding dielectric layer, wherein the bonding pads are formed on the vias, the thermal pads are formed on the and share the thermal routing, and the thermal routing laterally extends between at least two neighboring signal transmission features among the signal transmission features.
4 more elements
Dependencies are inferred from the claim text.