Gallium arsenide radio frequency circuit and millimeter wave front-end module
AssigneeWin Semiconductors Corp.
InventorsShao-Cheng Hsiao, Chih-Wen Huang, Jui-Chieh Chiu, Po-Kie Tseng
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Abstract
A gallium arsenide (GaAs) radio frequency (RF) circuit is disclosed. The GaAs RF circuit includes a power amplifier and a low noise amplifier; a first transmit/receive (TR) switch, coupled to the power amplifier and the low noise amplifier, wherein the first TR switch is fabricated by a pHEMT (Pseudomorphic High Electron Mobility Transistor) process; and a first active phase shifter, coupled to the power amplifier or the low noise amplifier, wherein the first active phase shifter is fabricated by an HBT (Heterojunction Bipolar Transistor) process; wherein the GaAs RF circuit is formed within a GaAs die.
Claims16
A gallium arsenide (GaAs) radio frequency (RF) circuit, comprising:
- a power amplifier or a low noise amplifier;
- a first transmit/receive (TR) switch, coupled to the power amplifier or the low noise amplifier, wherein the first TR switch is fabricated by a pHEMT (Pseudomorphic High Electron Mobility Transistor) process;
- and
- a first active phase shifter, coupled to the power amplifier or the low noise amplifier, wherein the first active phase shifter is fabricated by an HBT (Heterojunction Bipolar Transistor) process;
- wherein the GaAs RF circuit is formed within a GaAs die.
A millimeter wave front-end module, comprising:
- a plurality of antennas, wherein a spacing between the plurality of antennas is less than or equal to a half of a wavelength corresponding to an operating frequency at which the millimeter wave front-end module operates;
- and
- a gallium arsenide (GaAs) die, disposed between the plurality of antennas, comprising a plurality of GaAs radio frequency (RF) circuits, each GaAs RF circuit comprising:
- a power amplifier or a low noise amplifier;
- a first transmit/receive (TR) switch, coupled to the power amplifier or the low noise amplifier, wherein the first TR switch is fabricated by a pHEMT (Pseudomorphic High Electron Mobility Transistor) process;
- and
- a first active phase shifter, coupled to the power amplifier or the low noise amplifier, wherein the first active phase shifter is fabricated by an HBT (Heterojunction Bipolar Transistor) process;
- wherein a GaAs RF circuit is coupled to an antenna.
Dependencies are inferred from the claim text.