Method for detecting an attempt to breach the integrity of a semiconductor substrate of an integrated circuit from its back face, and corresponding integrated circuit

An integrated circuit, comprising:

• a semiconductor substrate doped solely with a first conductivity type and having a front face and a back face;
• a first contact and a second contact, wherein the first and second contacts are spaced apart from each other and located on the front face;
• an electrically conductive wafer located on the back face, wherein the electrically conductive wafer is in direct electrical connection with the back face of the semiconductor substrate;
• and
• a first detection circuit that is configured to detect a thinning of the semiconductor substrate from the back face, said first detection circuit including:
• a first measurement circuit that is configured to take a first measurement of a resistive value of the semiconductor substrate between said first contact, said second contact and said electrically conductive wafer.