Integrated circuit package and method

A method comprising:

• encapsulating an integrated circuit die with an encapsulant;
• depositing a first dielectric layer over the encapsulant;
• forming a first metallization pattern having a first via portion extending through the first dielectric layer and a first line portion extending along the first dielectric layer, the first metallization pattern having first convex topmost surfaces;
• forming a first sealing ring layer having a second via portion extending through the first dielectric layer and a second line portion extending along the first dielectric layer, the second via portion having a lesser width than the first via portion, the first sealing ring layer having a first concave topmost surface;
• depositing a second dielectric layer over the first sealing ring layer and the first metallization pattern;
• forming a second metallization pattern having a third via portion extending through the second dielectric layer and a third line portion extending along the second dielectric layer, the second metallization pattern having second convex topmost surfaces;
• and
• forming a second sealing ring layer having a fourth via portion extending through the second dielectric layer and a fourth line portion extending along the second dielectric layer, the fourth via portion having a lesser width than the third via portion, the second sealing ring layer having a second concave topmost surface, the fourth via portion and the second via portion being overlapping conductive rings in a plan view.

A method comprising:

• encapsulating an integrated circuit die with an encapsulant;
• forming a redistribution structure on the integrated circuit die and the encapsulant, the redistribution structure comprising dielectric layers, metallization patterns among the dielectric layers, and a sealing ring extending through the dielectric layers, the metallization patterns having respective convex top surfaces, the sealing ring surrounding the metallization patterns, the sealing ring comprising a plurality of sealing ring layers, a first subset of the sealing ring layers having respective concave top surfaces, a second subset of the sealing ring layers having respective flat top surfaces, each of the sealing ring layers having a center aligned along a same common axis;
• and
• sawing the redistribution structure and the encapsulant, the sawing forming cracks in the dielectric layers, the cracks extending continuously from sidewalls of the dielectric layers to sidewalls of the sealing ring, the cracks terminating at the sidewalls of the sealing ring.