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US 11,387,185 B2Granted
Field-effect transistor, method of manufacturing the same, and radio-frequency device
AssigneeSony Group Corporation
InventorsNaoki Saka, Daisaku Okamoto, Hideki Tanaka
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Abstract
There is provided a field-effect transistor including: a gate electrode; a semiconductor layer having a source region and a drain region with the gate electrode in between; contact plugs provided on the source region and the drain region; first metals stacked on the contact plugs; and a low-dielectric constant region provided in a region between the first metals along an in-plane direction of the semiconductor layer and provided at least in a first region below bottom surfaces of the first metals along a stacking direction.
Claims28
A field-effect transistor comprising:
- a gate electrode;
- a semiconductor layer;
- a first contact plug;
- a second contact plug;
- first metals, wherein one of the first metals is stacked on the first contact plug, and wherein a second one of the first metals is stacked on the second contact plug;
- one or more insulating films provided in at least one of
- a first region below bottom surfaces of the first metals along a stacking direction and between the first contact plug and the second contact plug along an in-plane direction of the semiconductor layer,
- a second region between top surfaces of the first metals and the bottom surfaces of the first metals along the stacking direction and between the first contact plug and the second contact plug along the in-plane direction of the semiconductor layer, and
- a third region above the top surfaces of the first metals along the stacking direction and between the first contact plug and the second contact plug along the in-plane direction of the semiconductor layer;
- and
- a low-dielectric constant region provided at least in the third region,
- wherein the low-dielectric constant region comprises a cavity, wherein, as viewed in a cross section including the stacking direction and a direction from a source region to a drain region, the cavity over the gate electrode is a single cavity.
9 more elements
Dependencies are inferred from the claim text.