Package structure and method for forming the same

A package structure, comprising:

• a semiconductor substrate;
• an interposer, disposed over the semiconductor substrate and electrically connected to the semiconductor substrate through a first redistribution layer (RDL), wherein the first RDL includes a first dielectric layer and a first interconnect structure, the interposer has a first side and a second side opposite to the first side, and the interposer includes a conductive pillar at the first side and a micro-via at the second side, and a first via portion of the first interconnect structure is tapered from the first RDL towards the micro-via of the interposer;
• a first die, disposed over the semiconductor substrate and electrically connected to the interposer through a second RDL and a third RDL, wherein the second RDL includes a second dielectric layer disposed between the interposer and the first die, and a second interconnect structure having a second via portion surrounded by the second dielectric layer and tapered from the second interconnect structure towards the first die, and having a pad portion coupled with the second via portion, the third RDL is between the second RDL and the first die, the third RDL includes a third dielectric layer disposed over the second dielectric layer, and a third interconnect structure surrounded by the third dielectric layer and electrically connected to the first die and the second interconnect structure;
• a second die, adjacent to the first die and electrically connected to the first die through the interposer, the second RDL and the third RDL;
• an underfill, disposed between the interposer and the second dielectric layer, and surrounding the conductive pillar;
• a first molding, surrounding the interposer and the pad portion of the second interconnect structure, and disposed between the first RDL and the second dielectric layer of the second RDL;
• a second molding, separating the first die from the second die, disposed over the second dielectric layer of the second RDL, and surrounding the third RDL;
• and
• a via, penetrating the first molding and electrically connecting the first RDL to the second RDL,
• wherein the conductive pillar of the interposer is bonded with the third interconnect structure, and the micro-via of the interposer contacts the first interconnect structure, and the second via portion of the second interconnect structure overlaps and contacts the conductive pillar of the interposer,
• the interposer, the underfill, the via and the pad portion of the second interconnect structure are entirely encapsulated by the first molding, a first total thickness of a height of the via and a thickness of the pad portion of the second interconnect structure is equal to a thickness of the first molding, a second total thickness of a thickness of the interposer and a thickness of the underfill is equal to the first total thickness and is greater than the height of the via, a first interface between the pad portion and the via and a second interface between the pad portion and the first molding are disposed below a third interface between the second dielectric layer and the first molding.

A package structure, comprising:

• a first die;
• a second die disposed adjacent to the first die;
• a first molding surrounding the first die and the second die;
• a first redistribution layer (RDL) surrounded by the first molding and including a first dielectric layer disposed over the first die and the second die, and a first interconnect structure surrounded by the first dielectric layer and electrically connected to the first die and the second die;
• a second RDL including a second dielectric layer and a second interconnect structure, wherein the second dielectric layer is disposed over the first RDL and the first molding, the second interconnect structure has a first portion surrounded by the second dielectric layer and electrically connected to the first interconnect structure of the first RDL, and a second portion disposed over the second dielectric layer and coupled with the first portion;
• an interposer disposed over the second RDL and electrically connected to the first die and the second die through the second interconnect structure, the interposer has a first side and a second side opposite to the first side, and the interposer includes a conductive pillar at the first side, a first via at the second side, and an interconnection structure disposed between the conductive pillar and the first via;
• an underfill, disposed between the interposer and the second dielectric layer, and surrounding the conductive pillar;
• a second molding surrounding the interposer and the second portion of the second interconnect structure, the second molding surrounds and is in contact with the second portion of the second interconnect structure;
• a third RDL including a third dielectric layer over the second molding and the interposer and a third interconnect structure surrounded by the third dielectric layer, and the third interconnect structure includes a via portion tapered from the third interconnect structure towards the first via;
• and
• a second via penetrating the second molding and electrically connecting the second RDL to the third RDL,
• wherein the via portion has a first end and a second end opposite to and wider than the first end, the first die and the second die are electrically connected to each other through the interposer, the conductive pillar of the interposer is bonded with the second interconnect structure of the second RDL, and the first via of the interposer contacts and overlaps the first end of the via portion of the third interconnect structure of the third RDL, the interposer, the underfill, the second via and the second portion of the second interconnect structure are entirely encapsulated by the second molding, a thickness of the second molding is equal to a first total thickness of a height of the second via and a thickness of the second portion of the second interconnect structure, a second total thickness of a thickness of the interposer and a thickness of the underfill is equal to the first total thickness and is greater than the height of the second via, a first interface between the second portion and the second via and a second interface between the second portion and the second molding are disposed above a third interface between the second dielectric layer and the second molding.