Semiconductor device and method for manufacturing the same

A method for manufacturing a semiconductor device, comprising the steps of:

• (a) preparing a semiconductor substrate;
• (b) forming a first insulating film on a main surface of the semiconductor substrate;
• (c) forming a pad on the first insulating film;
• (d) forming a second insulating film on the first insulating film so as to cover the pad;
• (e) forming an opening portion in the second insulating film so as to expose a first part of the pad while a second part of the pad is covered by the second insulating film;
• (f) forming a metal film on the first part of the pad exposed from the opening portion and on a part of the second insulating film that overlaps the second part of the pad;
• (g) bringing a probe into contact with the metal film to perform a probe inspection;
• and
• (h) bring a wire in contact with the metal film,
• wherein the metal film includes:
• a first region located at a first position on an upper surface of the metal film that corresponds to the first part of the pad;
• and
• a second region located at a second position on the upper surface of the metal film that corresponds to the second part of the pad,
• wherein, in the step (g), the probe is brought into contact with the second region of the metal film, and
• wherein, in the step (h), the wire is in contact with the first region of the metal film,
• wherein the metal film that includes i) the first region where the wire contacts the metal film and ii) the second region for bringing the probe into contact with the metal film is formed on the pad such that the pad being a single piece extends beyond an entire perimeter of the metal film when viewed in plan view,
• wherein, in plan view, an entirety of the first region where the wire contacts the metal film falls within the opening portion, and
• wherein a thickness of the part of the second insulating film that overlaps the second part of the pad is larger than a thickness of the pad, the part of the second insulating film being located between the metal film and the pad.