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US 11,387,168 B2Granted
Semiconductor devices
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsCheng-Lung Yang, Chih-Hung Su, Chen-Shien Chen, Hon-Lin Huang, Kun-Ming Tsai, Wei-Je Lin
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Abstract
A semiconductor device includes a first conductive layer, an organic layer and a silicon layer. The first conductive layer includes a first surface. The organic layer is disposed over the first surface of the first conductive layer. The silicon layer is disposed over the organic layer and extended onto and in contact with the first surface of the first conductive layer.
Claims20
A semiconductor device, comprising:
- a first conductive layer comprising a first surface;
- an organic layer disposed over the first surface of the first conductive layer;
- a silicon layer disposed over the organic layer, wherein the silicon layer has a first portion, and the first portion of the silicon layer is horizontally extended onto and in direct contact with the first surface of the first conductive layer;
- and
- a through via disposed on and electrically connected to the first conductive layer, wherein the first portion of the silicon layer is in direct contact with a sidewall of the through via.
2 more elements
A semiconductor device, comprising:
- a first conductive layer;
- an organic layer and a first dielectric layer, disposed over the first conductive layer;
- a first silicon layer, disposed between the organic layer and the first dielectric layer;
- and
- a second silicon layer, disposed between the organic layer and the first conductive layer, wherein the first silicon layer and the second silicon layer are in direct contact with the first conductive layer.
2 more elements
A semiconductor device, comprising:
- a first conductive layer;
- a first organic layer, a first non-conductive inorganic layer and a first silicon layer between the first organic layer and the first non-conductive inorganic layer, disposed over the first conductive layer;
- and
- a second organic layer, a second non-conductive inorganic layer and a second silicon layer between the second organic layer and the second non-conductive inorganic layer, disposed over the first conductive layer, wherein the first silicon layer and the second silicon layer are in direct contact with the first conductive layer.
1 more element
Dependencies are inferred from the claim text.