Semiconductor structure and manufacturing method for the same

An interconnect pattern structure, comprising:

• a first metal layer having a first continuous metal feature;
• a second metal layer over the first metal layer, having a second continuous metal feature;
• and
• a through substrate via (TSV) extending from the semiconductor substrate toward the first metal layer and in contact with the first continuous metal feature, wherein the TSV comprises:
• a first set of tiger tooth penetrating from the semiconductor substrate toward the second metal layer through the first metal layer,
• wherein the first continuous metal feature is cut off by a first dielectric feature of the first metal layer, wherein the first dielectric feature is in contact with the TSV, and
• wherein the second continuous metal feature is cut off by a second dielectric feature, wherein the second dielectric feature is free from contacting with the TSV.

A method for manufacturing a semiconductor structure, comprising:

• receiving a semiconductor substrate having an active side;
• forming a first metal layer closest to the active side of the semiconductor substrate, wherein the first metal layer has a first dielectric feature and a first continuous metal feature, wherein the first continuous metal feature is cut off by the first dielectric feature;
• forming a second metal layer at the active side of the semiconductor substrate and more distant from the active side than the first metal layer, wherein the second metal layer has a second dielectric feature and a second continuous metal feature, wherein the second continuous metal feature is cut off by the second dielectric feature from a top view perspective;
• and
• forming a through substrate via (TSV) extending from the semiconductor substrate to the first metal layer, wherein forming the TSV comprises:
• forming a tiger tooth penetrating the first metal layer, wherein the tiger tooth is a continuous portion of the TSV, wherein the tiger tooth is formed in contact with a first dielectric feature and free from contacting with the second dielectric feature.