Silicon carbide semiconductor device including a resin covering a silicon carbide semiconductor chip

A silicon carbide semiconductor device comprising:

• a silicon carbide semiconductor chip;
• and
• a resin covering the silicon carbide semiconductor chip, wherein
• the silicon carbide semiconductor chip includes a silicon carbide substrate, a first insulating film on the silicon carbide substrate, and a second insulating film on the first insulating film,
• the silicon carbide substrate has a first main surface in contact with the first insulating film, a second main surface opposite to the first main surface, and an outer peripheral surface continuous with each of the first main surface and the second main surface,
• the resin covers both of the outer peripheral surface and the second insulating film,
• the second insulating film has a Young's modulus lower than that of the resin,
• the second insulating film has a thermal expansion coefficient higher than that of the silicon carbide substrate and higher than that of the resin,
• the second insulating film includes a first outer peripheral end portion in a direction parallel to the first main surface, and an angular shoulder continuous with the first outer peripheral end portion,
• in a cross section perpendicular to the first main surface, the first outer peripheral end portion is provided along the outer peripheral surface,
• the resin is in contact with the shoulder,
• the first insulating film includes a second outer peripheral end portion in the direction parallel to the first main surface,
• in the cross section perpendicular to the first main surface, the second outer peripheral end portion is provided along the outer peripheral surface,
• the first insulating film includes a first annular portion, and a second annular portion spaced from and surrounding the first annular portion,
• the second insulating film includes a filling portion provided between the first annular portion and the second annular portion, and
• the filling portion is in contact with the silicon carbide substrate.