Semiconductor device
AssigneeUnited Microelectronics Corp.
InventorsLi-Wei Feng, Shih-Hung Tsai, Chao-Hung Lin, Hon-Huei Liu, Shih-Fang Hong, Jyh-Shyang Jenq
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Abstract
A semiconductor device includes: a substrate having a first region and a second region; a first fin-shaped structure on the first region and a second fin-shaped structure on the second region, wherein each of the first fin-shaped structure and the second fin-shaped structure comprises a top portion and a bottom portion; a first doped layer around the bottom portion of the first fin-shaped structure; a second doped layer around the bottom portion of the second fin-shaped structure; a first liner on the first doped layer; and a second liner on the second doped layer.
Claims10
A semiconductor device, comprising:
- a substrate having a first region and a second region, wherein the first region comprises a PMOS region and the second region comprises a NMOS region;
- a first fin-shaped structure on the first region and a second fin-shaped structure on the second region, wherein each of the first fin-shaped structure and the second fin-shaped structure comprises a top portion and a bottom portion;
- a first doped layer around the bottom portion of the first fin-shaped structure;
- a second doped layer around the bottom portion of the second fin-shaped structure, wherein the first doped layer and the second doped layer comprise different materials;
- a first liner on the first doped layer;
- and
- a second liner on the second doped layer.
Dependencies are inferred from the claim text.