Method for producing a component by filling a cavity within an electrical isolation area with carbon-based material

A method for producing a component based on a plurality of transistors on a substrate comprising an active area and an electrical isolation area, each transistor of the plurality of transistors comprising a gate and spacers on either side of the gate, the electrical isolation area comprising at least one cavity formed as a hollow between a spacer of a first transistor of the plurality of transistors and a spacer of a second transistor of the plurality of transistors, the first transistor and the second transistor being adjacent, the method comprising:

• forming the gates of the transistors;
• forming the spacers;
• forming a mechanically constraining layer for the transistors;
• after forming the spacers and before forming the mechanically constraining layer, forming a filling configured to at least partially fill, with a filling material, the at least one cavity within the electrical isolation area, between the spacer of the first transistor and the spacer of the second transistor;
• and
• at least one step, subsequent to the filling, of consumption of a dielectric material of the at least one electrical isolation area at exposed portions of the at least one electrical isolation area,
• wherein the filling material is based on a carbon material configured not to be consumed during the at least one step of the consumption of the dielectric material, and
• wherein the filling material is removed before a high temperature heat treatment chosen from a diffusion anneal and an activation anneal.