Jet ablation die singulation systems and related methods
AssigneeSemiconductor Components Industries, LLC
InventorMichael J. Seddon
Life of this patent
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Abstract
Implementations of a method of singulating a plurality of semiconductor die may include forming an opening in a layer of passivation material coupled to a second side of a semiconductor substrate; etching substantially through a thickness of the semiconductor substrate at the opening in the layer of passivation material to form etched sidewalls along the thickness at a plurality of die streets; and jet ablating one or more portions of the layer of passivation material that overhangs the etched sidewalls.
Claims19
A method of singulating a plurality of semiconductor die, the method comprising:
- forming an opening in a layer of passivation material coupled to a second side of a semiconductor substrate;
- etching substantially through a thickness of the semiconductor substrate at the opening in the layer of passivation material to form etched sidewalls along the thickness at a plurality of die streets;
- and
- jet ablating one or more portions of the layer of passivation material that overhangs the etched sidewalls.
A method of singulating a plurality of semiconductor die, the method comprising:
- forming a pattern in a back metal layer coupled on a first side of a semiconductor substrate, the semiconductor substrate comprising a plurality of semiconductor die;
- etching substantially through a thickness of the semiconductor substrate at the pattern in the back metal layer to form a plurality of sidewalls across the thickness;
- etching substantially through a thickness of a passivation layer coupled to a second side of the semiconductor substrate at the pattern in the back metal layer to form an opening in the passivation layer;
- and
- jet ablating one or more portions of the passivation layer overhanging the plurality of sidewalls.
A method of singulating a plurality of semiconductor die, the method comprising:
- mounting a semiconductor substrate to a tape;
- etching substantially through a thickness of the semiconductor substrate at a plurality of die streets to form etched sidewalls along the thickness;
- and
- jet ablating one or more portions of a layer of passivation material that overhangs the etched sidewalls;
- wherein the layer of passivation material is used as a mask for etching substantially through the thickness of the semiconductor substrate.
Dependencies are inferred from the claim text.