Redistribution lines with protection layers and method forming same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMing-Da Cheng, Wen-Hsiung Lu, Chin Wei Kang, Yung-Han Chuang, Lung-Kai Mao, Yung-Sheng Lin
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Abstract
A method includes forming a metal seed layer over a first conductive feature of a wafer, forming a patterned photo resist on the metal seed layer, forming a second conductive feature in an opening in the patterned photo resist, and heating the wafer to generate a gap between the second conductive feature and the patterned photo resist. A protection layer is plated on the second conductive feature. The method further includes removing the patterned photo resist, and etching the metal seed layer.
Claims20
A method comprising:
- forming a metal seed layer over a first conductive feature of a wafer;
- forming a patterned photo resist on the metal seed layer;
- forming a second conductive feature in an opening in the patterned photo resist;
- heating the wafer to generate a gap between the second conductive feature and the patterned photo resist;
- plating a protection layer on the second conductive feature;
- removing the patterned photo resist;
- and
- etching the metal seed layer.
A device comprising:
- a first dielectric layer;
- a redistribution line comprising a portion over the first dielectric layer, wherein the redistribution line comprises:
- a first conductive feature;
- and
- a protection layer comprising:
- a top portion over and contacting a first top surface of the first conductive feature;
- and
- a sidewall portion contacting a sidewall of the first conductive feature to form a vertical interface;
- and
- a second dielectric layer extending on a sidewall and a second top surface of the redistribution line.
A device comprising:
- a passivation layer;
- a redistribution line comprising a via portion extending into the passivation layer, and a line portion over and joining to the via portion, wherein the line portion comprises:
- a seed layer over the passivation layer;
- a conductive material over the seed layer;
- and
- a protection layer comprising:
- a top portion over and contacting the conductive material;
- and
- a first sidewall portion directly contacting a first sidewall of the conductive material;
- and
- a first dielectric layer extending on the first sidewall portion and the top portion of the protection layer.
Dependencies are inferred from the claim text.