Method of manufacturing semiconductor device
AssigneeTokyo Electron Limited
InventorsSyuji Nozawa, Tatsuya Yamaguchi, Sunghil Lee
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Abstract
A method of manufacturing a semiconductor device, the method including: a first film deposition process of stacking a polymer film on a substrate on which a recess is formed, wherein the polymer film is a film of a polymer having a urea bond and is formed by polymerizing a plurality of kinds of monomers; a second film deposition process of stacking a sealing film on the substrate in a state in which at least a bottom and a sidewall of the recess are covered with the polymer film; and a desorbing process of desorbing and diffusing the polymer film under the sealing film through the sealing film by depolymerizing the polymer film by heating the substrate to a first temperature.
Claims7
A method of manufacturing a semiconductor device, the method comprising:
- a first film deposition process of stacking a polymer film on a substrate on which a recess is formed, wherein the polymer film is a film of a polymer having a urea bond and is formed by polymerizing a plurality of kinds of monomers;
- a second film deposition process of stacking a sealing film on the substrate in a state in which at least a bottom and a sidewall of the recess are covered with the polymer film;
- and
- a desorbing process of desorbing and diffusing the polymer film under the sealing film through the sealing film by depolymerizing the polymer film by heating the substrate to a first temperature.
Dependencies are inferred from the claim text.