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US 11,387,112 B2Granted
Surface processing method and processing system
AssigneeTokyo Electron Limited
InventorsKoichi Takatsuki, Tadahiro Ishizaka, Mikio Suzuki, Toshio Hasegawa
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Abstract
There is provided a method of performing a surface processing on a substrate having a metal layer formed on a bottom portion of a recess formed in an insulating film, the method including: supplying a halogen-containing gas into a processing chamber in which the substrate is loaded; and removing a metal oxide from the bottom portion of the recess using the halogen-containing gas.
Claims11
A method of performing a surface processing on a substrate having a metal layer formed on a bottom portion of a recess formed in an insulating film, the method comprising:
- supplying a halogen-containing gas into a processing chamber in which the substrate is loaded;
- removing a metal oxide film from the bottom portion of the recess using the halogen-containing gas;
- and
- after the removing the metal oxide film, forming a metal film on the bottom portion of the recess by alternately supplying the halogen-containing gas and a hydrogen gas into the processing chamber,
- wherein in the forming the metal film, a halogen-containing substance, which has remained in the processing chamber as a reaction product generated during the removing the metal oxide film, is reacted with the hydrogen gas, and is removed,
- wherein the metal oxide film is a tungsten oxide film, and the metal film is a tungsten film, and
- wherein the halogen-containing gas is WF6, and the halogen-containing substance is a fluorine-containing substance.
4 more elements
Dependencies are inferred from the claim text.