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US 11,387,110 B2Granted
Plasma processing apparatus and plasma processing method
AssigneeHitachi High-Tech Corporation
InventorYasushi Sonoda
Life of this patent
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Abstract
A plasma processing apparatus, including a processing; a first radio frequency power source; a sample stage on which the sample is placed; a second radio frequency power; and a control device configured to control, when the second radio frequency power source is controlled based on a change in a plasma impedance, which is generated when a first gas that is a gas for a first step is switched to a second gas that is a gas for a second step, such that the second radio frequency power is changed from a value of the second radio frequency power in the first step to a value of the second radio frequency power in the second step, and a supply time of the first gas such that a supply time of the second radio frequency power in the first step is substantially equal to a time of the first step.
Claims12
A plasma processing apparatus, comprising:
- a processing chamber in which a sample is subjected to plasma processing;
- a first radio frequency power source configured to supply a first radio frequency power for generating a plasma;
- a sample stage on which the sample is placed;
- a second radio frequency power source configured to supply a second radio frequency power to the sample stage;
- and
- a control device configured to control, when the first radio frequency power source is controlled based on a change in a plasma impedance, which is generated when a first gas that is a gas for a first step is switched to a second gas that is a gas for a second step, such that the first radio frequency power is changed from a value of the first radio frequency power in the first step to a value of the first radio frequency power in the second step, a supply time of the first gas by using a first time and a second time such that a supply time of the first radio frequency power in the first step is substantially equal to a time of the first step, wherein
- the first step and the second step are steps of plasma processing conditions,
- the first time is a time period from a start time of the first step to a start time of a supply of the first gas, and
- the second time is a time period from a finish time of the first step to a finish time of the supply of the first gas.
6 more elements
A plasma processing apparatus, comprising:
- a processing chamber in which a sample is subjected to plasma processing;
- a first radio frequency power source configured to supply a first radio frequency power for generating a plasma;
- a sample stage on which the sample is placed;
- a second radio frequency power source configured to supply a second radio frequency power to the sample stage;
- and
- a control device configured to control, when the second radio frequency power source is controlled based on a change in a plasma impedance, which is generated when a first gas that is a gas for a first step is switched to a second gas that is a gas for a second step, such that the second radio frequency power is changed from a value of the second radio frequency power in the first step to a value of the second radio frequency power in the second step, a supply time of the first gas by using a first time and a second time such that a supply time of the second radio frequency power in the first step is substantially equal to a time of the first step, wherein
- the first step and the second step are steps of plasma processing conditions,
- the first time is a time period from a start time of the first step to a start time of a supply of the first gas, and
- the second time is a time period from a finish time of the first step to a finish time of the supply of the first gas.
6 more elements
A plasma processing apparatus, comprising:
- a processing chamber in which a sample is subjected to plasma processing;
- a first radio frequency power source configured to supply a first radio frequency power for generating a plasma;
- a sample stage on which the sample is placed;
- a second radio frequency power source configured to supply a second radio frequency power to the sample stage;
- and
- a control device configured to control, when the first radio frequency power source is controlled based on a change in a plasma impedance, which is generated when a first gas that is a gas for a first step is switched to a second gas that is a gas for a second step, such that the first radio frequency power is changed from a value of the first radio frequency power in the first step to a value of the first radio frequency power in the second step, a supply time of the second gas by using a first time and a second time such that a supply time of the first radio frequency power in the second step is substantially equal to a time of the second step, wherein
- the first step and the second step are steps of plasma processing conditions,
- the first time is a time period from a start time of the first step to a start time of a supply of the first gas, and
- the second time is a time period from a finish time of the first step to a finish time of the supply of the first gas.
6 more elements
A plasma processing apparatus, comprising:
- a processing chamber in which a sample is subjected to plasma processing;
- a first radio frequency power source configured to supply a first radio frequency power for generating a plasma;
- a sample stage on which the sample is placed;
- a second radio frequency power source configured to supply a second radio frequency power to the sample stage;
- and
- a control device configured to control, when the second radio frequency power source is controlled based on a change in a plasma impedance, which is generated when a first gas that is a gas for a first step is switched to a second gas that is a gas for a second step, such that the second radio frequency power is changed from a value of the second radio frequency power in the first step to a value of the second radio frequency power in the second step, a supply time of the second gas by using a first time and a second time such that a supply time of the second radio frequency power in the second step is substantially equal to a time of the second step, wherein
- the first step and the second step are steps of plasma processing conditions,
- the first time is a time period from a start time of the first step to a start time of a supply of the first gas, and
- the second time is a time period from a finish time of the first step to a finish time of the supply of the first gas.
6 more elements
A plasma processing method in which a plasma processing apparatus is used,
- the plasma processing apparatus including:
- a processing chamber in which a sample is subjected to plasma processing;
- a first radio frequency power source configured to supply a first radio frequency power for generating a plasma;
- a sample stage on which the sample is placed;
- and
- a second radio frequency power source configured to supply a second radio frequency power to the sample stage,
- the plasma processing method comprising:
- controlling, when the first radio frequency power source is controlled based on a change in a plasma impedance, which is generated when a first gas that is a gas for a first step is switched to a second gas that is a gas for a second step, such that the first radio frequency power is changed from a value of the first radio frequency power in the first step to a value of the first radio frequency power in the second step, a supply time of the first gas by using a first time and a second time such that a supply time of the first radio frequency power in the first step is substantially equal to a time of the first step, wherein
- the first step and the second step are steps of plasma processing conditions,
- the first time is a time period from a start time of the first step to a start time of a supply of the first gas, and
- the second time is a time period from a finish time of the first step to a finish time of the supply of the first gas.
8 more elements
A plasma processing method in which a plasma processing apparatus is used,
- the plasma processing apparatus including:
- a processing chamber in which a sample is subjected to plasma processing;
- a first radio frequency power source configured to supply a first radio frequency power for generating a plasma;
- a sample stage on which the sample is placed;
- and
- a second radio frequency power source configured to supply a second radio frequency power to the sample stage,
- the plasma processing method comprising:
- controlling, when the second radio frequency power source is controlled based on a change in a plasma impedance, which is generated when a first gas that is a gas for a first step is switched to a second gas that is a gas for a second step, such that the second radio frequency power is changed from a value of the second radio frequency power in the first step to a value of the second radio frequency power in the second step, a supply time of the first gas by using a first time and a second time such that a supply time of the second radio frequency power in the first step is substantially equal to a time of the first step, wherein
- the first step and the second step are steps of plasma processing conditions,
- the first time is a time period from a start time of the first step to a start time of a supply of the first gas, and
- the second time is a time period from a finish time of the first step to a finish time of the supply of the first gas.
8 more elements
A plasma processing method in which a plasma processing apparatus is used,
- the plasma processing apparatus including:
- a processing chamber in which a sample is subjected to plasma processing;
- a first radio frequency power source configured to supply a first radio frequency power for generating a plasma;
- a sample stage on which the sample is placed;
- and
- a second radio frequency power source configured to supply a second radio frequency power to the sample stage,
- the plasma processing method comprising:
- controlling, when the first radio frequency power source is controlled based on a change in a plasma impedance, which is generated when a first gas that is a gas for a first step is switched to a second gas that is a gas for a second step, such that the first radio frequency power is changed from a value of the first radio frequency power in the first step to a value of the first radio frequency power in the second step, a supply time of the second gas by using a first time and a second time such that a supply time of the first radio frequency power in the second step is substantially equal to a time of the second step, wherein
- the first step and the second step are steps of plasma processing conditions,
- the first time is a time period from a start time of the first step to a start time of a supply of the first gas, and
- the second time is a time period from a finish time of the first step to a finish time of the supply of the first gas.
8 more elements
A plasma processing method in which a plasma processing apparatus is used,
- the plasma processing apparatus including:
- a processing chamber in which a sample is subjected to plasma processing;
- a first radio frequency power source configured to supply a first radio frequency power for generating a plasma;
- a sample stage on which the sample is placed;
- and
- a second radio frequency power source configured to supply a second radio frequency power to the sample stage,
- the plasma processing method comprising:
- controlling, when the second radio frequency power source is controlled based on a change in a plasma impedance, which is generated when a first gas that is a gas for a first step is switched to a second gas that is a gas for a second step, such that the second radio frequency power is changed from a value of the second radio frequency power in the first step to a value of the second radio frequency power in the second step, a supply time of the second gas by using a first time and a second time such that a supply time of the second radio frequency power in the second step is substantially equal to a time of the second step, wherein
- the first step and the second step are steps of plasma processing conditions,
- the first time is a time period from a start time of the first step to a start time of a supply of the first gas, and
- the second time is a time period from a finish time of the first step to a finish time of the supply of the first gas.
8 more elements
Dependencies are inferred from the claim text.