CMP process and methods thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChe-Lun Chang, Pin-Chuan Su, Hsin-Chieh Huang, Ming-Yuan Wu, Tzu kai Lin, Yu-Wen Wang, Che-Yuan Hsu, deseased
Life of this patent
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Abstract
A method of forming a semiconductor device includes forming a first epitaxial layer over a substrate to form a wafer, depositing a dielectric layer over the first epitaxial layer, patterning the dielectric layer to form an opening, etching the first epitaxial layer through the opening to form a recess, forming a second epitaxial layer in the recess, etching the dielectric layer to expose a top surface of the first epitaxial layer, and planarizing the exposed top surface of the first epitaxial layer and a top surface of the second epitaxial layer.
Claims20
A method of forming a semiconductor device, the method comprising:
- forming a first epitaxial layer over a substrate to form a wafer;
- depositing a dielectric layer over the first epitaxial layer;
- patterning the dielectric layer to form an opening;
- etching the first epitaxial layer through the opening to form a recess;
- forming a second epitaxial layer in the recess;
- removing the dielectric layer using a wet etching process to expose a top surface of the first epitaxial layer;
- and
- after removing the dielectric layer, planarizing the exposed top surface of the first epitaxial layer and a top surface of the second epitaxial layer.
A method of forming a semiconductor device, the method comprising:
- forming a first doped region and a second doped region in a top portion of a substrate;
- growing a first epitaxial layer over the substrate, wherein the first epitaxial layer directly contacts the first doped region and the second doped region;
- depositing a hard mask layer over the first epitaxial layer;
- etching an opening in a first portion of the hard mask layer to expose a first top surface of the first epitaxial layer;
- etching the first epitaxial layer through the opening to form a recess, wherein the recess is directly over the first doped region;
- growing a second epitaxial layer in the recess;
- removing remaining portions of the hard mask layer to expose a second top surface of the first epitaxial layer, wherein a top surface of the second epitaxial layer is higher than the exposed second top surface of the first epitaxial layer;
- and
- planarizing the top surface of the second epitaxial layer and the exposed second top surface of the first epitaxial layer.
A method of forming a semiconductor device, the method comprising:
- forming a first epitaxial layer over a substrate;
- forming a recess in the first epitaxial layer;
- forming a second epitaxial layer in the recess;
- and
- planarizing a top surface of the first epitaxial layer and a top surface of the second epitaxial layer, wherein planarizing the top surface of the first epitaxial layer and the top surface of the second epitaxial layer comprises using a chemical mechanical polish (CMP) slurry, the CMP slurry comprising a polymer that selectively reduces a removal rate of the first epitaxial layer, wherein the slurry comprises an abrasive that has a concentration in a range from about 0.5 to about 1.5 percent by weight.
Dependencies are inferred from the claim text.