Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
AssigneeASM IP Holding B.V.
InventorSuvi Haukka
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Abstract
A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a metalorganic precursor, the metalorganic precursor comprising a metal selected from the group consisting of a cobalt, nickel, tungsten, molybdenum, manganese, iron, and combinations thereof. The method may also include; contacting the substrate with a second vapor phase reactant comprising ruthenium tetroxide (RuO4); wherein the ruthenium-containing film comprises a ruthenium-metal alloy. Semiconductor device structures including ruthenium-metal alloys deposited by the methods of the disclosure are also disclosed.
Claims13
A method of depositing a ruthenium-containing film on a substrate by a cyclical deposition process, the method comprising:
- contacting the substrate with a first vapor phase reactant comprising a metalorganic precursor, the metalorganic precursor comprising a metal selected from the group consisting of cobalt, nickel, tungsten, molybdenum, manganese, iron, and combinations thereof;
- contacting the substrate with a second vapor phase reactant comprising ruthenium tetroxide (RuO4);
- wherein contacting the substrate with the first vapor phase reactant and contacting the substrate with the second vapor phase reactant comprise forming a barrier layer on a surface of a trench formed in a dielectric material,
- wherein the ruthenium-containing film comprises a ruthenium-metal alloy, and
- wherein the first vapor phase reactant and the second vapor phase reactant at least one of react or decompose on a surface of the substrate to form the ruthenium-containing film;
- depositing a metal interconnect material onto the barrier material within the trench;
- and
- after depositing the metal interconnect material contacting the substrate again with the first vapor phase reactant and contacting the substrate again with the second vapor phase reactant to form a capping layer disposed directly on an upper surface of the metal interconnect material.
A method of depositing a ruthenium-containing film on a substrate by a cyclical deposition process, the method comprising:
- contacting the substrate with a first vapor phase reactant comprising a metalorganic precursor, the metalorganic precursor comprising a metal selected from the group consisting of cobalt, nickel, tungsten, molybdenum, manganese, iron, and combinations thereof;
- and
- contacting the substrate with a second vapor phase reactant comprising ruthenium tetroxide (RuO4);
- wherein the ruthenium-containing film comprises a ruthenium-metal alloy wherein contacting the substrate with the first vapor phase reactant and contacting the substrate with the second vapor phase reactant comprise forming a barrier layer on a surface of a trench formed in a dielectric material;
- depositing a metal interconnect material onto the barrier material with the trench;
- and,
- after deposition the metal interconnect material, contacting the substrate again with the first vapor phase reactant and contacting the substrate again with the second vapor phase reactant to form a capping layer disposed directly on an upper surface of the metal interconnect material.
Dependencies are inferred from the claim text.