Loading effect reduction through multiple coat-etch processes

A method of fabricating a semiconductor device, comprising:

• forming a first dummy gate and a second dummy gate over a substrate, wherein a dielectric layer surrounds the first dummy gate and the second dummy gate;
• removing the first dummy gate and the second dummy gate, thereby forming a first opening and a second opening in the dielectric layer in place of the removed first dummy gate and second dummy gate, respectively;
• depositing a work-function (WF) metal partially in the first opening and partially in the second opening;
• forming a first layer over the WF metal in both the first opening and the second opening;
• etching back different amounts of the first layer in the first opening and the second opening;
• and
• partially removing different amounts of the WF metal in the first opening and the second opening.

A method of fabricating a semiconductor device, comprising:

• forming a first recess and a second recess in a dielectric layer, wherein the first recess and the second recess are formed to have different lateral dimensions;
• depositing a metal layer in the first recess and the second recess, wherein the metal layer partially fills the first recess and the second recess;
• completely filling the first recess and the second recess with a first layer;
• performing a first etch-back process on the first layer, wherein the first etch-back process removes different amounts of the first layer in the first recess and the second recess;
• forming a second layer over the first layer;
• forming a protective mask over a portion of the second layer filling the second recess;
• performing a second etch-back process on the second layer and on the first layer, wherein the second etch-back process removes the first layer and second layer in the first recess while the first layer and the second layer in the second recess are protected by the protective mask;
• partially removing the metal layer in the first recess while the metal layer in the second recess is protected by the protective mask;
• and
• after the metal layer has been partially removed, completely removing the first layer and the second layer in both the first recess and the second recess.