Method for manufacturing a mixed substrate
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorHeimanu Niebojewski
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Abstract
A method for manufacturing a mixed substrate having, on a main face of a support substrate, a first region and a second region, includes a) providing a starting substrate which comprises an intermediate layer, consisting of the second material, and the support substrate; b) forming a mask which comprises an aperture delimiting the first region; c) forming a cavity; and d) forming the first region by epitaxially growing the first material in a single crystal form in the cavity The method includes step c1), performed before step d), of forming a protective layer, made of an amorphous material, overlaying the flank of the cavity and leaving the bottom of said cavity exposed to the external environment.
Claims20
A method for manufacturing a mixed substrate which comprises, on a main face of a support substrate, a first region comprising a first single crystal material and a second region, contiguous to the first region and comprising a second material, the method comprising the steps of:
- a) providing a starting substrate which comprises a stack comprising at least one intermediate layer overlaying the main face of the support substrate, the intermediate layer comprising the second material in a single crystal or polycrystalline form;
- b) forming a mask on the stack, said mask comprising an aperture delimiting location of the first region;
- c) etching the stack at the aperture so as to form a cavity delimited by a bottom and walls, the bottom being located on or in the support substrate;
- and
- d) forming the first region by epitaxially growing the first single crystal material in a single crystal form in the cavity,
- wherein the method comprises a step c1), performed before step d), of forming a protective layer, made of an amorphous material, exclusively covering the walls of the cavity and leaving the bottom of said cavity exposed to an external environment.
Dependencies are inferred from the claim text.