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US 11,387,085 B2Granted
Multicathode deposition system
AssigneeApplied Materials, Inc.
InventorsSanjay Bhat, Vibhu Jindal, Kamatchigobinath Manoharan
Life of this patent
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Abstract
A physical vapor deposition (PVD) chamber and a method of operation thereof are disclosed. Chambers and methods are described that provide a chamber comprising one or more of contours that reduce particle defects, temperature control and or measurement and and/or voltage particle traps to reduce processing defects.
Claims17
A physical vapor deposition (PVD) chamber comprising:
- a plurality of cathode assemblies;
- an upper shield below the plurality of cathode assemblies having a shield hole to expose one of the plurality of cathode assemblies;
- and
- a lower shield below the upper shield, the lower shield having an upper end in contact with the upper shield, a lower end opposite the upper end, and a lower shield wall comprising a height “H” extending from the upper end to the lower end and a lower shield wall inner surface, wherein the lower shield wall inner surface has a substantially straight region extending from the upper end to about 0.8H wherein the substantially straight region has a first bend adjacent the upper end defining a first angle that is not in a range of from about 0.1 degrees to about 120 degrees and the lower shield wall inner surface has a second bend adjacent the lower end defining a second angle, the lower shield wall inner surface having a contour that minimizes accumulation of particles on the lower shield.
1 more element
A physical vapor deposition (PVD) chamber comprising:
- a plurality of cathode assemblies;
- an upper shield below the plurality of cathode assemblies having a shield hole to expose one of the plurality of cathode assemblies;
- and
- a lower shield below the upper shield, the lower shield having an upper end in contact with the upper shield, a lower end opposite the upper end, and a lower shield wall comprising a height “H” extending from the upper end to the lower end and a lower shield wall inner surface, wherein the lower shield wall inner surface has a substantially straight region extending from the upper end to a range of 0.85H to 0.90H, wherein the substantially straight region has a first bend adjacent the upper end defining a first angle that is not in a range of from about 0.1 degrees to about 120 degrees and the lower shield wall inner surface has a second bend adjacent the lower end defining a second angle, the lower shield wall inner surface having a contour that minimizes accumulation of particles on the lower shield;
- and
- one or more heating elements adjacent to the lower shield.
3 more elements
Dependencies are inferred from the claim text.