In situ angle measurement using channeling
AssigneeApplied Materials, Inc.
InventorsFrank Sinclair, Jonathan Gerald England, Joseph C. Olson
Life of this patent
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Abstract
A system and method that is capable of measuring the incident angle of an ion beam, especially an ion beam comprising heavier ions, is disclosed. In one embodiment, X-rays, rather than ions, are used to determine the channeling direction. In another embodiment, the workpiece is constructed, at least in part, of a material having a high molecular weight such that heaver ion beams can be measured. Further, in another embodiment, the parameters of the ion beam are measured across an entirety of the beam, allowing components of the ion implantation system to be further tuned to create a more uniform beam.
Claims18
An incident angle measurement system comprising:
- an ion implantation system, generating an ion beam;
- a movable workpiece holder to hold a workpiece;
- a detector to capture emissions from the workpiece, wherein the detector comprises a plurality of sensors disposed along a width of the ion beam in an X direction;
- and
- a controller, wherein the controller rotates the movable workpiece holder to vary an X angle and receives an output from the detector at each of a plurality of X angles, and wherein an incident angle of the ion beam in the X direction at each of a plurality of locations along the X direction is determined to be at the X angle where the output received from a respective sensor is a minimum.
An incident angle measurement system comprising:
- an ion implantation system, generating an ion beam;
- a movable workpiece holder to hold a workpiece;
- a detector, wherein the detector comprises one or more X-ray detectors;
- and
- a controller, wherein the controller rotates the movable workpiece holder to vary an X angle and receives an output from the detector at each of a plurality of X angles, wherein the output from the detector is indicative of an amount of X-rays emitted by the workpiece and received by the detector, and wherein an incident angle of the ion beam is determined to be at the X angle where the output from the detector is a minimum.
An incident angle measurement system comprising:
- an ion implantation system, generating an ion beam;
- a movable workpiece holder to hold a workpiece;
- a detector;
- a single crystal target material, different from the workpiece, disposed on the movable workpiece holder at a location beyond an edge of the workpiece, such that the single crystal target material may be implanted by the ion beam when the workpiece is disposed on the movable workpiece holder;
- and
- a controller, wherein the controller rotates the movable workpiece holder to vary an X angle and receives an output from the detector at each of a plurality of X angles, and wherein an incident angle of the ion beam is determined to be at the X angle where the output from the detector is a minimum.
Dependencies are inferred from the claim text.