Non-volatile memory device, operating method thereof, controller for controlling the same, and storage device having the same

A non-volatile memory device comprising:

• a memory cell region having a first metal pad;
• and
• a peripheral circuit region having a second metal pad, and connected to the memory cell region by the first metal pad and the second metal pad in a vertical direction,
• wherein the non-volatile memory device comprises:
• a memory cell array disposed in the memory cell region, and comprising a plurality of memory blocks that comprises a plurality of memory cells connected to a plurality of word lines and a plurality of bit lines;
• a row decoder disposed in the peripheral circuit region, and configured to select one among the plurality of word lines;
• a page buffer circuit disposed in the peripheral circuit region, and comprising a plurality of page buffers connected to the plurality of bit lines;
• and
• a control logic disposed in the peripheral circuit region, and configured to:
• receive a command latch enable (CLE) signal, an address latch enable (ALE) signal, a chip enable (CE) signal, a write enable (WE) signal, a read enable (RE) signal, and a data strobe (DQS) signal by control pins;
• and
• latch a command or an address at an edge of the received WE signal according to the received CLE signal and the received ALE signal, to perform a heterogeneous multi-sensing operation, and
• wherein the heterogeneous multi-sensing operation comprises a plurality of sensing operations that is performed under different sensing conditions for at least two threshold voltage distributions.

A method of operating a non-volatile memory device, comprising:

• receiving a health checkup command;
• based on the health checkup command being received, performing a heterogeneous multi-sensing operation under different sensing conditions;
• and
• outputting, to an external device, cell state information corresponding to the performed heterogeneous multi-sensing operation,
• wherein the heterogeneous multi-sensing operation comprises a plurality of sensing operations performed under the different sensing conditions, and
• wherein a page buffer group respectively corresponding to the plurality of sensing operations is set.