Determining read voltages for memory systems with machine learning

A memory system comprising:

• a memory;
• and
• a memory controller coupled to the memory and configured to:
• determine a first read voltage using stored read voltage data based on a first set of parameters associated with memory data to be read from the memory;
• obtain a first reading output by reading the memory data using the first read voltage;
• determine whether the first reading output passes an Error Correction Code (ECC) test;
• in response to determining that the first reading output fails to pass the ECC test, generate a second read voltage using at least one machine learning (ML) algorithm based on a second set of parameters associated with the memory data, the second set of parameters comprising the first set of parameters and at least one additional parameter;
• obtain a second reading output by reading the memory data using the second read voltage;
• determine whether the second reading output passes the ECC test;
• and
• in response to determining that the second reading output passes the ECC test, output the second reading output as the memory data read from the memory.

A memory controller coupled to a memory, the memory controller comprising:

• at least one processor;
• an Error Correction Code (ECC) circuit;
• a machine learning (ML) circuit;
• and
• at least non-transitory medium storing instructions executable by the processor,
• wherein the memory controller is configured to:
• determine, by the ML circuit, a first read voltage using stored read voltage data based on a first set of parameters associated with memory data to be read from the memory;
• obtain, by the processor, a first reading output by reading the memory data using the first read voltage;
• determine, by the ECC circuit, whether the first reading output passes an ECC test;
• in response to determining that the first reading output does not pass the ECC test, generate, by the ML circuit, a second read voltage using at least one machine learning (ML) algorithm based on a second set of parameters associated with the memory data, the second set of parameters comprising the first set of parameters and at least one additional parameter;
• obtain, by the processor, a second reading output by reading the memory data using the second read voltage;
• determine, by the ECC circuit, whether the second reading output passes the ECC test;
• and
• in response to determining that the second reading output passes the ECC test, output, by the processor, the second reading output as the memory data read from the memory.