Voltage generator and memory device including the same
AssigneeSamsung Electronics Co., Ltd.
InventorsBilal Ahmad Janjua, Sungwhan Seo
Life of this patent
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AssigneeSamsung Electronics Co., Ltd.
InventorsBilal Ahmad Janjua, Sungwhan Seo
Estimating the term…
A memory device including a memory cell area having a plurality of memory cells, and a peripheral circuit area including peripheral circuits configured to control the memory cells, the peripheral circuits connected to the memory cells by at least a portion of bit lines, word lines, and select lines may be provided. The peripheral circuits may include a reference voltage generator configured to output at least one reference voltage in response to control data of a control logic. The reference voltage generator may include a first resistor chain including first resistors connected in series between a first power node and a second power node, a second resistor chain including second resistors connected in series between the first power node and the second power node, and a plurality of decoders connected to the first resistor chain and the second resistor chain.
A memory device, comprising:
A voltage generator, comprising:
A memory device, comprising:
Dependencies are inferred from the claim text.