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US 11,386,953 B2Granted
Multiple memory states device and method of making same
AssigneeCyberswarm, Inc.
InventorsViorel-Georgel Dumitru, Cristina Besleaga Stan, Alin Velea, Aurelian-Catalin Galca
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Abstract
A phase-change material based resistive memory contains a resistive layer and two electrical contacts. After fabrication the memory is subjected to thermal treatment which initiates a transition toward a crystalline state favoring in this way the subsequent obtaining of a large number of resistive memory states.
Claims14
A phase-change material based resistive memory, comprising:
- a phase-change material (PCM) resistive layer;
- and
- two electrical contacts, wherein the PCM resistive layer is subjected after fabrication to a specific thermal treatment in an inert atmosphere at a temperature between 190° C.-210° C., which initiates its transition from an amorphous state toward a crystalline state to enable obtaining of a large number of different resistive memory states, the obtaining comprising setting the resistive memory to respective desired resistive states and then applying respective voltage sweeps with different upper voltage limits to the thermally treated PCM resistive layer based on the desired resistive states.
A method for obtaining a multiple states resistive memory based on phase-change materials, said method comprising:
- making a deposition of a PCM resistor and two electrical contacts for fabricating the resistive memory;
- annealing the PCM resistor with a specific thermal treatment in an inert atmosphere at a temperature between 190° C.-210° C. after fabrication in order to initiate its transition from an amorphous state toward a crystalline state;
- and
- obtaining subsequently respective resistive states by setting the resistive memory to respective desired resistive states and then applying certain respective voltage sweeps with different upper voltage limits to the thermally treated PCM resistive layer based on the desired resistive states.
1 more element
Dependencies are inferred from the claim text.