Memory device with switching element connected in series to resistance change memory element

A memory device comprising:

• a first wiring line extending in a first direction;
• a second wiring line extending in a second direction intersecting the first direction;
• a memory cell connected between the first wiring line and the second wiring line, and including a resistance change memory element and a switching element connected in series to the resistance change memory element, the resistance change memory element being switchable between a low-resistance state and a high-resistance state;
• and
• a determination circuit which determines a determination object resistance state set in advance to the resistance change memory element,
• wherein the switching element possesses characteristics that when a voltage applied between two terminals thereof increases to a first voltage, the switching element makes a transition from an off-state to an on-state and, when a voltage applied between the two terminals thereof decreases to a second voltage lower than the first voltage, the switching element makes a transition from the on-state to the off-state, and
• wherein the determination circuit comprises a voltage storing section which stores a determination object voltage which corresponds to a voltage difference between a base voltage and a voltage applied to the second wiring line when the switching element makes a transition from the on-state to the off-state, and a determining section which determines the determination object resistance state based on the determination object voltage.