Method of detecting threshold voltage shift and threshold votage shift detection device

A method of detecting threshold voltage shift during fabrication of a display substrate, applied to a pixel driving circuit which is electrically coupled to a control line, a voltage line and a detection node, respectively, comprising:

• in a detection cycle including a setting phase and a detection phase,
• before fabricating a light-emitting element on a driving circuit layer including the pixel driving circuit of an array substrate of the display substrate,
• in the setting phase, controlling a transistor included in the pixel driving circuit to be in a biased state;
• in the detection phase, providing a preset control voltage signal to the control line, providing a preset voltage signal to the voltage line, and determining a threshold voltage shift state of the transistor according to an electric potential of the detection node,
• wherein the pixel driving circuit includes a data writing circuit, a driving circuit and a compensation control circuit;
• the control line includes a gate line and a compensation control line;
• the voltage line includes a power supply voltage line, a data line, and an external compensation line,
• wherein in the setting phase, controlling a transistor included in the pixel driving circuit to be in a biased state, includes:
• in the setting phase, controlling a data writing transistor included in the data writing circuit, a driving transistor included in the driving circuit, or a compensation control transistor included in the compensation control circuit to be in the biased state,
• wherein the detection phase includes a first detection period, a second detection period and a third detection period that are sequentially set, and
• wherein in the detection phase, providing a preset control voltage signal to the control line, providing a preset voltage signal to the voltage line, and determining a threshold voltage shift state of the transistor according to an electric potential of the detection node, includes:
• in the detection phase, providing a preset compensation voltage signal to the external compensation line;
• in the first detection period, providing a first compensation control voltage signal to the compensation control line;
• in the second detection period, providing a second compensation control voltage signal to the compensation control line;
• and
• in the third detection period, providing the first compensation control voltage signal to the compensation control line;
• and after a second preset period, detecting the electric potential of the detection node, and determining the threshold voltage shift state of the compensation control transistor according to the electric potential of the detection node.

A method of detecting threshold voltage shift during fabrication of a display substrate, applied to a pixel driving circuit which is electrically coupled to a control line, a voltage line and a detection node, respectively, comprising:

• in a detection cycle including a setting phase and a detection phase,
• before fabricating a light-emitting element on a driving circuit layer including the pixel driving circuit of an array substrate of the display substrate,
• in the setting phase, controlling a transistor included in the pixel driving circuit to be in a biased state;
• in the detection phase, providing a preset control voltage signal to the control line, providing a preset voltage signal to the voltage line, and determining a threshold voltage shift state of the transistor according to an electric potential of the detection node,
• wherein the pixel driving circuit includes a data writing circuit, a driving circuit and a compensation control circuit;
• the control line includes a gate line and a compensation control line;
• the voltage line includes a power supply voltage line, a data line, and an external compensation line,
• wherein in the setting phase, controlling a transistor included in the pixel driving circuit to be in a biased state, includes:
• in the setting phase, controlling a data writing transistor included in the data writing circuit, a driving transistor included in the driving circuit, or a compensation control transistor included in the compensation control circuit to be in the biased state,
• wherein the detection phase includes at least one detection sub-phase;
• the detection sub-phase includes a first detection period and a second detection period;
• the first detection period includes a first detection sub-period and a second detection sub-period;
• the second detection period includes a third detection sub-period and a fourth detection sub-period, and
• wherein in the detection phase, providing a preset control voltage signal to the control line, providing a preset voltage signal to the voltage line, and determining a threshold voltage shift state of the transistor according to an electric potential of the detection node, includes:
• in the detection phase, providing a preset fourth power supply voltage to the power supply voltage line
• in the first detection sub-period, providing a fourth data voltage to the data line and providing a sixth gate driving voltage signal to the gate line, to control the data writing circuit to write the fourth data voltage into a control electrode of the driving transistor;
• in the second detection sub-period, providing the fourth data voltage to the data line and providing a seventh gate driving voltage signal to the gate line, thereby enabling the data writing circuit to control the data line to be decoupled from the control electrode of the driving transistor;
• after a third preset period, detecting an electric potential of the detection node, thereby obtaining a first detection electric potential;
• in the third detection sub-period, providing a fifth data voltage to the data line and providing an eighth gate driving voltage signal to the gate line, to control the data writing circuit to write the fourth data voltage to the control electrode of the driving transistor;
• in the fourth detection sub-period, providing the fifth data voltage to the data line and providing a ninth gate driving voltage signal to the gate line, thereby enabling the data writing circuit to control the data line to be decoupled from the control electrode of the driving transistor;
• after a fourth preset period, detecting an electric potential of the detection node, thereby obtaining a second detection electric potential;
• and
• according to a sum of the first detection electric potential and the second detection electric potential, determining a threshold shift state of the driving transistor.