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US 11,381,240 B2Granted
Stacked MOSFET circuits and methods of operating stacked MOSFET circuits
AssigneeAstec International Limited
InventorsYong Tao Xie, Ernesto Zaparita Caguioa, Jr.
Life of this patent
Estimating the term…
Abstract
Example MOSFET circuits include a first metal-oxide-semiconductor field-effect transistor (MOSFET) having a gate, a source and a drain, and a second MOSFET coupled in series with the first MOSFET. The second MOSFET has a gate, a source and a drain. The MOSFET circuit also includes a controller configured to supply a same control signal to the gate of the first MOSFET and the gate of the second MOSFET to turn on or turn off the first MOSFET and the second MOSFET when a drain-source voltage of the first MOSFET and a drain-source voltage of the second MOSFET are substantially zero. Other MOSFET circuits and methods of operating MOSFET circuits are also disclosed.
Claims18
A MOSFET circuit comprising:
- a first metal-oxide-semiconductor field-effect transistor (MOSFET) having a gate, a source and a drain;
- a second MOSFET coupled in series with the first MOSFET, the second MOSFET having a gate, a source and a drain;
- a voltage sharing circuit coupled between the first MOSFET and the second MOSFET, the voltage sharing circuit comprising:
- a first resistor;
- and
- a second resistor coupled in series with the first resistor;
- wherein the first and second resistor are positioned between the drain of the first MOSFET and the source of the second MOSFET;
- and
- wherein a node located between the first resistor and the second resistor is coupled with a node located between the first MOSFET and the second MOSFET;
- a switch coupled between the gate of the first MOSFET and the node located between the first MOSFET and the second MOSFET;
- and
- a controller configured to supply a same control signal to the gate of the first MOSFET and the gate of the second MOSFET to turn on the first MOSFET and the second MOSFET in response to a drain-source voltage of the first MOSFET and a drain-source voltage of the second MOSFET being substantially zero prior to turn on.
9 more elements
A MOSFET circuit comprising:
- a first metal-oxide-semiconductor field-effect transistor (MOSFET) having a gate, a source and a drain;
- a second MOSFET coupled in series with the first MOSFET, the second MOSFET having a gate, a source and a drain;
- a voltage sharing circuit coupled between the first MOSFET and the second MOSFET, the voltage sharing circuit comprising:
- a first capacitor;
- and
- a second capacitor coupled in series with the first capacitor;
- and
- wherein the first and second capacitor are positioned between the drain of the first MOSFET and the source of the second MOSFET;
- a switch coupled between the gate of the first MOSFET and the node located between the first MOSFET and the second MOSFET;
- and
- a controller configured to supply a same control signal to the gate of the first MOSFET and the gate of the second MOSFET to turn on the first MOSFET and the second MOSFET in response to a drain-source voltage of the first MOSFET and a drain-source voltage of the second MOSFET being substantially zero prior to turn on.
8 more elements
A MOSFET circuit comprising:
- a first metal-oxide-semiconductor field-effect transistor (MOSFET) having a gate, a source and a drain;
- a second MOSFET coupled in series with the first MOSFET, the second MOSFET having a gate, a source and a drain;
- a controller configured to supply a same control signal to the gate of the first MOSFET and the gate of the second MOSFET to turn on the first MOSFET and the second MOSFET in response to a drain-source voltage of the first MOSFET and a drain-source voltage of the second MOSFET being substantially zero prior to turn on;
- a diode having a cathode and an anode, wherein the cathode is coupled with the first MOSFET and the anode is coupled with the controller;
- and
- a voltage sharing circuit coupled between the first MOSFET and the second MOSFET, the voltage sharing circuit comprising:
- a first resistor;
- and
- a second resistor coupled in series with the first resistor;
- wherein the first and second resistor are positioned between the drain of the first MOSFET and the source of the second MOSFET;
- and
- wherein a node located between the first resistor and the second resistor is coupled with a node located between the first MOSFET and the second MOSFET.
9 more elements
A MOSFET circuit comprising:
- a first metal-oxide-semiconductor field-effect transistor (MOSFET) having a gate, a source and a drain;
- a second MOSFET coupled in series with the first MOSFET, the second MOSFET having a gate, a source and a drain;
- a voltage sharing circuit coupled between the first MOSFET and the second MOSFET, the voltage sharing circuit comprising:
- a first resistor;
- a second resistor coupled in series with the first resistor;
- a first capacitor;
- and
- a second capacitor coupled in series with the first capacitor;
- and
- wherein the first and second resistor are positioned between the drain of the first MOSFET and the source of the second MOSFET;
- wherein a node located between the first resistor and the second resistor is coupled with a node located between the first MOSFET and the second MOSFET;
- and
- wherein the first and second capacitor are positioned between the drain of the first MOSFET and the source of the second MOSFET;
- a controller configured to supply a same control signal to the gate of the first MOSFET and the gate of the second MOSFET to turn on the first MOSFET and the second MOSFET;
- and
- a diode having a cathode and an anode, wherein the cathode is coupled with the first MOSFET and the anode is coupled with the controller.
13 more elements
Dependencies are inferred from the claim text.