Loading patent…
AssigneesKabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
InventorsYasuyuki Fujiwara, Yiyao Liu, Yusuke Sato, Naotsugu Kako, Hideaki Majima
Estimating the term…
A semiconductor device that normally-off drives a first transistor that normally-on drives, the semiconductor device includes a first circuitry, a second circuitry, and a first diode. The first circuitry that is connected with a power supply voltage and a ground voltage, detects the power supply voltage, and outputs a transition state of the power supply voltage. The second circuitry that is connected with the power supply voltage, the ground voltage, the first circuitry, and a second transistor, and outputs a drive voltage of a second transistor connected in series with the first transistor, based on an output of the first circuitry. The first diode having an anode connected with a drive terminal of the first transistor and a cathode connected with an output terminal of the second transistor.
A semiconductor device that normally-off drives a first transistor that normally-on drives, the semiconductor device comprising:
Dependencies are inferred from the claim text.
Drawings are temporarily unavailable. Open the PDF at USPTO
From the US filing history. Foreign family members aren’t listed.
Modifications for increasing the maximum permissible switched voltage: in field-effect transistor switches
Modifications for ensuring a predetermined initial state when the supply voltage has been applied: in field-effect transistor switches
Modifications for ensuring a fully conducting state: in field-effect transistor switches
The devices being field-effect transistors: the output circuit comprising more than one controlled field-effect transistor
About 14 years 5 months of term left · ends 17 Mar 2041 (estimated)
This application is based upon and claims the benefit of priority from the prior Japanese Patent Application No. 2020-157674, filed on Sep. 18, 2020, the entire contents of which are incorporated herein by reference.
Embodiments of the present invention relate to a semiconductor device.
A power device using GaN (gallium nitride) has advantages such as higher switching speed, lower recovery loss, and faster charge/discharge of output capacity, as compared with a metal-oxide-semiconductor field-effect transistor (MOSFET) using silicon (Si). Transistors using GaN are mostly normally-on type in general, but development has been widely conducted to use these advantages as normally-off type transistors.
FIG. 1 is a circuit diagram showing an example of a semiconductor device according to an embodiment;
FIG. 2 is a circuit diagram showing an implementation example of the semiconductor device according to the embodiment;
FIG. 3 is a view showing an on/off state of a transistor according to the embodiment;
According to one embodiment, a semiconductor device that normally-off drives a first transistor that normally-on drives, the semiconductor device includes a first circuitry, a second circuitry, and a first diode. The first circuitry that is connected with a power supply voltage and a ground voltage, detects the power supply voltage, and outputs a transition state of the power supply voltage. The second circuitry that is connected with the power supply voltage, the ground voltage, the first circuitry, and a second transistor, and outputs a drive voltage of a second transistor connected in series with the first transistor, based on an output of the first circuitry. The first diode having an anode connected with a drive terminal of the first transistor and a cathode connected with an output terminal of the second transistor.
And, the first circuitry and the second circuitry do not require an external input signal to drive the first transistor normally-off.
An embodiment will be described below with reference to the drawings. In the figures, D indicates the position of drain unless otherwise specified.