Wideband balun

A semiconductor die having an integrated wideband balun, the semiconductor die comprising:

• two or more metallization layers;
• and
• a wideband balun having a first port, a second port, a third port, and a fourth port, the wideband balun comprising:
• a first transmission line formed in the two or more metallization layers;
• a second transmission line formed in the two or more metallization layers and electrically connected between the second port and the fourth port, wherein the first transmission line and the second transmission line are magnetically coupled;
• a third transmission line formed in the two or more metallization layers and electrically connected between the third port and a reference voltage;
• a fourth transmission line formed in the two or more metallization layers and electrically connected in series with the first transmission line between the third port and the first port, the fourth transmission line operable to provide inductive compensation to balance the wideband balun;
• and
• a first capacitor connected between the first port and the first transmission line, wherein the first capacitor resonates with an inductance at the first port to extend a low frequency bandwidth of the wideband balun.