Phase change memory cell with second conductive layer
AssigneeInternational Business Machines Corporation
InventorsJuntao Li, Kangguo Cheng, Ruilong Xie, Junli Wang
Life of this patent
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Abstract
A method may include forming a via opening in a dielectric layer, depositing a first conductive layer along a bottom and a sidewall of the via opening, depositing a second conductive layer on top of the first conductive layer. The method may further include recessing the first conductive layer to form a trench and exposing a sidewall of the second conductive layer, depositing a non-conductive material in the trench, and depositing a phase change material layer on top of the dielectric layer. The top surface of the second conductive layer may be in direct contact with a bottom surface of the phase change material layer.
Claims8
A structure comprising:
- a first conductive material;
- a barrier layer separating the first conductive material from a first electrode, wherein a top of the barrier layer is substantially flush with a top of the first conductive material;
- a second conductive material, wherein an upper portion of the second conductive material is surrounded by a non-conductive material and a lower portion of the second conductive material is surrounded by the first conductive material;
- the non-conductive material, the non-conductive material is above the first conductive material;
- a phase change material layer, wherein a top of the second conductive material is in direct contact with the phase change material layer;
- and
- a dielectric layer below the phase change material layer, the dielectric layer is different from the non-conductive material, wherein a bottom of the phase change material layer is substantially flush with a top of the non-conductive material, a top of the dielectric layer, and a top of the second conductive material.
A structure comprising:
- a first conductive material;
- a first electrode, the first electrode is below and in electrical contact with the first conductive material;
- a barrier layer separating the first conductive material from the first electrode, wherein a top of the barrier layer is substantially flush with a top of the first conductive material;
- a second conductive material, wherein an upper portion of the second conductive material is surrounded by a non-conductive material and a lower portion of the second conductive material is surrounded by the first conductive material;
- the non-conductive material, the non-conductive material is above the first conductive material;
- a phase change material layer, the phase change material layer is in direct contact with a top of the second conductive material;
- a dielectric layer below the phase change material layer, the dielectric layer is different from the non-conductive material, wherein a bottom of the phase change material layer is substantially flush with a top of the non-conductive material, a top of the dielectric layer, and a top of the second conductive material;
- and
- a second electrode, the second electrode is orthogonal to the first electrode, the second electrode is above and in electrical contact with the phase change material.
Dependencies are inferred from the claim text.