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US 11,380,841 B2Granted
Magnetoresistive effect element and method of manufacturing the same
AssigneeKioxia Corporation
InventorShuichi Murakami
Life of this patent
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Abstract
A magnetoresistive-effect element includes a first ferromagnet, a first layer on the first ferromagnet and a first layer comprising magnesium oxide, a second ferromagnet on the first layer, a metal layer above the second ferromagnet and a second layer on the metal layer. The second layer and the magnesium oxide have a selected ratio larger than 1 to etching by ion beams.
Claims4
A magnetoresistive-effect element comprising:
- a first ferromagnet;
- a first layer on the first ferromagnet, the first layer comprising magnesium oxide;
- a second ferromagnet on the first layer;
- a metal layer above the second ferromagnet;
- and
- a second layer on the metal layer,
- wherein:
- the second layer and the magnesium oxide have a selected ratio larger than 1 to etching by ion beams, and
- the second layer comprises at least one of silver sulfate (I), an aluminum chloride, aluminum fluoride, mullite, aluminum sulfate, an arsenic pentoxide, arsenic trioxide, an aluminum oxide, a witherite, barium fluoride, barium nitrate, alexandrite, calcium hydroxide, a calcium chloride, calcite, fluorite, dolomite, a calcium oxide, perovskite, malachite, a fayalite, lanthanum oxide, magnesium hydroxide, a forsterite, spinel, magnesite, a cryolite, a beta2-tridiymite, samarium oxide, and rutile.
6 more elements
Dependencies are inferred from the claim text.