Memory cell with magnetic access selector apparatus

An integrated chip comprising:

• a magnetic tunnel junction (MTJ) device having a first electrode and a second electrode;
• and
• an access selector apparatus for the MTJ device comprising a first metal structure and a second metal structure separated by one or more non-metallic layers;
• wherein one of the first metal structure and the second metal structure is coupled to the second electrode;
• the first metal structure comprises a polarized ferromagnetic layer;
• the first metal structure is an electrode for the access selector apparatus;
• the access selector apparatus is a bipolar selector;
• the MTJ device and the access selector apparatus are formed by a stack of material layers;
• the polarized ferromagnetic layer has in-plane polarization;
• and
• the MTJ device comprises a pinned layer having perpendicular magnetic polarization.

An integrated chip, comprising:

• a magnetic tunnel junction (MTJ) device disposed within a dielectric structure over a substrate, the MTJ device comprising an MTJ disposed between a first MTJ electrode and a second MTJ electrode;
• and
• a bipolar selector comprising a middle structure disposed between a first bipolar selector electrode and a second bipolar selector electrode;
• wherein the MTJ comprises a pinned layer having perpendicular magnetization;
• the second bipolar selector electrode is coupled to or integral with the first MTJ electrode;
• the middle structure is one or more layers of insulators and/or semiconductors;
• and
• one of the first bipolar selector electrode and the second bipolar selector electrode comprises a polarized magnetic layer having in-plane polarization.